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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
DNLS350Y-13

DNLS350Y-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 50V 3A SOT89-3

32678
ZXTN620MATA

ZXTN620MATA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 80V 3.5A 3-DFN

37246
FMMT723QTA

FMMT723QTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP SOT23

345000
AC857CWQ-7

AC857CWQ-7

Zetex Semiconductors (Diodes Inc.)

GENERAL PURPOSE TRANSISTOR SOT32

0
BCV49TA

BCV49TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 60V 0.5A SOT-89

0
BCP5410TA

BCP5410TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 1A SOT223

4244000
ZXTN4004KTC

ZXTN4004KTC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 150V 1A TO252

2559
ZTX1149A

ZTX1149A

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 25V 3A E-LINE

43718000
ZXTN2010GTA

ZXTN2010GTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 6A SOT223

7990
FZT657QTA

FZT657QTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 300V 1A SOT223

0
BC807-16W-7

BC807-16W-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 0.5A SC70-3

185712000
BC848CW-7-F

BC848CW-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 30V 0.1A SC70-3

0
ZXTP07040DFFTA

ZXTP07040DFFTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 3A SOT23F-3

8970
DZT5551Q-13

DZT5551Q-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 160V 600MA SOT223

0
MMSTA64-7-F

MMSTA64-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP DARL 30V 0.5A SC70-3

87524000
MMST2222A-7-F

MMST2222A-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 0.6A SC70-3

2950
ZTX789ASTZ

ZTX789ASTZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 25V 3A E-LINE

0
FZT757TA

FZT757TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 300V 0.5A SOT-223

1946
FZT694BTA

FZT694BTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 120V 1A SOT-223

19894
FZT603TA

FZT603TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 80V 2A SOT-223

20439

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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