Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BSR33QTA

BSR33QTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 80V 1A SOT-89

0

DZTA42Q-13

DZTA42Q-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 300V 500MA SOT223

0

ZTX792ASTZ

ZTX792ASTZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 70V 2A E-LINE

655

DSS60601MZ4-13

DSS60601MZ4-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 6A SOT-223

29739

FMMT493TC

FMMT493TC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 1A SOT23-3

0

BC807-25W-7

BC807-25W-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 0.5A SC70-3

4352

ZXTN19020CFFTA

ZXTN19020CFFTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 7A SOT23F-3

36000

ZTX653STZ

ZTX653STZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 2A E-LINE

126000

BCX5516TA

BCX5516TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SOT89

28967

ZXTP19100CFFTA

ZXTP19100CFFTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 2A SOT23F-3

30273

ZTX457

ZTX457

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 300V 0.5A E-LINE

236000

ZXTP2041FTA

ZXTP2041FTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 1A SOT23-3

7634

ZTX792A

ZTX792A

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 70V 2A E-LINE

264000

FZT956TA

FZT956TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 200V 2A SOT-223

346815000

MMSTA56-7-F

MMSTA56-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 80V 0.5A SC70-3

1793

ZXTN2018FTA

ZXTN2018FTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 5A SOT23-3

476

FMMT734TA

FMMT734TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP DARL 100V 0.8A SOT23-3

72027

ZUMT718TA

ZUMT718TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 1A SC70-3

25270

FMMT417TD

FMMT417TD

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 0.5A SOT23-3

7327

BCX6825TA

BCX6825TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 1A SOT-89

1760096000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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