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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
APT13005TF-G1

APT13005TF-G1

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 450V 4A TO220-3

0
BC807-16-7-F

BC807-16-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 0.5A SOT-23

0
FZT749TA

FZT749TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 25V 3A SOT-223

348
BCX6925TA

BCX6925TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 1A SOT89

19733000
FMMT618TA

FMMT618TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 2.5A SOT23-3

12702
ZXT10N15DE6TA

ZXT10N15DE6TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 15V 4A SOT23-6

667712000
BC847BFZ-7B

BC847BFZ-7B

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.1A X2-DFN060

170000
ZTX1149ASTZ

ZTX1149ASTZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 25V 3A E-LINE

0
BCX5110TA

BCX5110TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 1A SOT89

247000
FMMT620TA

FMMT620TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 80V 1.5A SOT23-3

1361
ZTX696BSTZ

ZTX696BSTZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 180V 0.5A E-LINE

0
FZT717TA

FZT717TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 12V 3A SOT223

13298
DPLS160V-7

DPLS160V-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 1A SOT-563

4526
MMBTA05Q-13-F

MMBTA05Q-13-F

Zetex Semiconductors (Diodes Inc.)

GENERAL PURPOSE TRANSISTOR SOT23

0
ZXTP25140BFHQTA

ZXTP25140BFHQTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 140V 1A SOT23

12000
ZTX788BSTZ

ZTX788BSTZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 15V 3A E-LINE

0
DXTP3C60PSQ-13

DXTP3C60PSQ-13

Zetex Semiconductors (Diodes Inc.)

PWR LOW SAT TRANSISTOR POWERDI50

5000
BC846BLP4-7B

BC846BLP4-7B

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 65V 0.1A X2-DFN1006-3

48976
MMST4403-7-F

MMST4403-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 0.6A SC70-3

7462
ZXT849KTC

ZXT849KTC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 30V 7A D-PAK

2388

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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