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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BCX5610TA

BCX5610TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 80V 1A SOT89

2147483647
ZXT13P20DE6TA

ZXT13P20DE6TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 4A SOT23-6

0
BCX5316TA

BCX5316TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 80V 1A SOT-89

0
FZT851QTA

FZT851QTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 6A SOT-223

0
FMMT625TA

FMMT625TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 150V 1A SOT23-3

7602
FZT751QTA

FZT751QTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 3A SOT-223

19480
FMMT491QTA

FMMT491QTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SOT23-3

1729
DCX69-25-13

DCX69-25-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 1A SOT89-3

30000
FZT749TC

FZT749TC

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 25V 3A SOT223

4000
DZT3150-13

DZT3150-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 25V 5A SOT-223

22842500
FZT1053ATA

FZT1053ATA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 75V 4.5A SOT-223

13481
FMMT494QTA

FMMT494QTA

Zetex Semiconductors (Diodes Inc.)

NPN TRANSISTOR120V SOT23

2147483647
MMBT123S-7-F

MMBT123S-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 18V 1A SOT23-3

571218000
DXTN26070CY-13

DXTN26070CY-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN SOT89

0
BC857BLP-7B

BC857BLP-7B

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 0.1A DFN1006-3

47270
ZXTN25100DGQTA

ZXTN25100DGQTA

Zetex Semiconductors (Diodes Inc.)

IC PWR TRANSISTOR SOT223

4449
DXT5551-13

DXT5551-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 160V 0.6A SOT89-3

54461
ZXTN25020BFHTA

ZXTN25020BFHTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 4.5A SOT23-3

3585
ZTX458

ZTX458

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 400V 0.3A E-LINE

735676000
BC817-40-7-F

BC817-40-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 500MA SOT23-3

53370

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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