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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
MMST5551-7-F

MMST5551-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 160V 0.2A SC70-3

25389
MMBT3904FA-7B

MMBT3904FA-7B

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 0.2A X2-DFN0806-3

2147483647
APT13003SZTR-G1

APT13003SZTR-G1

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 450V 1.3A TO92

0
FMMT495TA

FMMT495TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 150V 1A SOT23-3

80254
FZT948TA

FZT948TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 6A SOT-223

12036
DSS5160V-7

DSS5160V-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 1A SOT-563

5162
DZT853-13

DZT853-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 6A SOT223

1580
FZT1048ATA

FZT1048ATA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 17.5V 5A SOT-223

1391304000
ZTX453

ZTX453

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 1A E-LINE

368832000
FMMT591QTA

FMMT591QTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 1A SOT23-3

4023
FMMT495TC

FMMT495TC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 150V 1A SOT23-3

13289
FZT560TC

FZT560TC

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 500V 0.15A SOT223

0
DXT2010P5-13

DXT2010P5-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 6A POWERDI5

0
ZTX869

ZTX869

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 25V 5A E-LINE

28512000
DZT2222A-13

DZT2222A-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 0.6A SOT-223

25172
FCX589TA

FCX589TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 30V 1A SOT-89

2080552000
APT13003SU-G1

APT13003SU-G1

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 450V 1.3A TO126

0
MMBTA63-7

MMBTA63-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP DARL 30V 0.5A SOT23-3

6
FZT591TA

FZT591TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 1A SOT-223

59000
BCW68HTA

BCW68HTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 0.8A SOT23-3

94664

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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