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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
DVRN6056-7-F

DVRN6056-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 0.6A SOT-26

0
FMMTA13TA

FMMTA13TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 40V 0.3A SOT23-3

2997
ZX5T949GTA

ZX5T949GTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 30V 5.5A SOT-223

1475
FMMT624TA

FMMT624TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 125V 1A SOT23-3

28259
APT27HZTR-G1

APT27HZTR-G1

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 450V 0.8A TO92

2485
DCP56-16-13

DCP56-16-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 80V 1A SOT-223

0
MMBT3906LP-7

MMBT3906LP-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 0.2A 3DFN

2147483647
BSR43TA

BSR43TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 80V 1A SOT-89

1131
ZXTP2006E6TA

ZXTP2006E6TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 3.5A SOT23-6

127
FCX688BTA

FCX688BTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 12V 3A SOT-89

19000
FZT493ATA

FZT493ATA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 1A SOT223

40100000
ZXTP2008ZQTA

ZXTP2008ZQTA

Zetex Semiconductors (Diodes Inc.)

PWR LOW SAT TRANSISTOR SOT89

0
ZXTN04120HP5TC

ZXTN04120HP5TC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 120V 1.5A PWRDI5

62
BC848B-13-F

BC848B-13-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 30V 0.1A SOT-23

90000
ZXTP25140BFHTA

ZXTP25140BFHTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 140V 1A SOT23-3

0
FZT758TA

FZT758TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 400V 0.5A SOT-223

5320
ZTX1051ASTZ

ZTX1051ASTZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 4A E-LINE

24000
MMST4401-7-F

MMST4401-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 0.6A SC70-3

2617
ZXTP19020DFFTA

ZXTP19020DFFTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 5.5A SOT23F-3

95586000
BC817-40Q-7-F

BC817-40Q-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 500MA SOT23

11794

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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