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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
ZXTP722MATA

ZXTP722MATA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 70V 2.5A 3-DFN

72
DSS5140U-7

DSS5140U-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 1A SOT-323

5988
ZTX689BSTZ

ZTX689BSTZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 3A E-LINE

104000
BC847AT-7-F

BC847AT-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.1A SOT523

1750
FZT1147ATA

FZT1147ATA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 12V 5A SOT-223

14567000
FZT789ATA

FZT789ATA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 25V 3A SOT-223

879
ZXTP25040DFLTA

ZXTP25040DFLTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 1.5A SOT23-3

11165
FCX1149ATA

FCX1149ATA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 25V 3A SOT-89

2033
BC858C-7-F

BC858C-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 30V 0.1A SOT23-3

0
ZTX849

ZTX849

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 30V 5A E-LINE

527740000
ZXTP19060CFFTA

ZXTP19060CFFTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 4A SOT23F-3

1217733000
DPLS4140E-13

DPLS4140E-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 140V 4A SOT-223

2434
FZT951TA

FZT951TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 5A SOT-223

15496
ZXTN19060CGTA

ZXTN19060CGTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 7A SOT223

8502
ZXTN07012EFFTA

ZXTN07012EFFTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 12V 4.5A SOT23F-3

487
DNLS350E-13

DNLS350E-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 50V 3A SOT-223

37783
DXT790AP5-13

DXT790AP5-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 3A POWERDI5

1172325000
ZXTP25020CFFTA

ZXTP25020CFFTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 4.5A SOT23F-3

18935
2DB1424R-13

2DB1424R-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 3A SOT89-3

0
FCX491ATA

FCX491ATA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 1A SOT-89

63595

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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