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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
FCX558QTA

FCX558QTA

Zetex Semiconductors (Diodes Inc.)

PWR HI VOLTAGE TRANSISTOR SOT89

0
FMMT614QTA

FMMT614QTA

Zetex Semiconductors (Diodes Inc.)

SS MID-PERF TRANSISTOR SOT23 T&R

30000
ZTX953

ZTX953

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 3.5A E-LINE

4152
MMSTA42-7-F

MMSTA42-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 300V 0.2A SC70-3

40678
DT955-7

DT955-7

Zetex Semiconductors (Diodes Inc.)

TRANS SOT223

0
ZX5T2E6TA

ZX5T2E6TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 3.5A SOT23-6

27000
DP350T05-7

DP350T05-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 350V 0.5A SOT23-3

723
ZTX718STZ

ZTX718STZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 2.5A E-LINE

26000
ZXTN04120HKTC

ZXTN04120HKTC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 120V 1.5A TO252

2259
ZXTN19020DZQTA

ZXTN19020DZQTA

Zetex Semiconductors (Diodes Inc.)

PWR LOW SAT TRANSISTOR SOT89

349000
FZT755TA

FZT755TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 150V 1A SOT-223

85
BC817-40W-7

BC817-40W-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.5A SC70-3

12094
FMMT494TA

FMMT494TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 120V 1A SOT23-3

5243
ZXTN10150DZTA

ZXTN10150DZTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 150V 1A

685000
ZTX705

ZTX705

Zetex Semiconductors (Diodes Inc.)

TRANS PNP DARL 120V 1A E-LINE

10023
ZXTP03200BGTA

ZXTP03200BGTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 200V 2A

979
DXTP19020DP5-13

DXTP19020DP5-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 8A POWERDI5

1935
ZXTP720MATA

ZXTP720MATA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 3A 3-DFN

4692
FMMT718TA

FMMT718TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 1.5A SOT23-3

15016
ZXTP25020DFLTA

ZXTP25020DFLTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 1.5A SOT23-3

20354

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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