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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
MMSTA14-7-F

MMSTA14-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 30V 0.3A SC70-3

8167
FZT753TC

FZT753TC

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 2A SOT223

14554000
ZTX457STZ

ZTX457STZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 300V 0.5A E-LINE

4000
DPBT8105-7

DPBT8105-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 1A SOT23-3

141779
ZTX450

ZTX450

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 1A E-LINE

4992
FZT957TA

FZT957TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 300V 1A SOT-223

59
ZTX790A

ZTX790A

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 2A E-LINE

363016000
ZTX658STZ

ZTX658STZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 400V 0.5A E-LINE

42000
ZXT13P40DE6TA

ZXT13P40DE6TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 3A SOT23-6

78
DXTN07100BP5-13

DXTN07100BP5-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 2A POWERDI5

0
2DD1664Q-13

2DD1664Q-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 32V 1A SOT89-3

1967
ZTX601

ZTX601

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 160V 1A E-LINE

2147483647
DZT651-13

DZT651-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 3A SOT-223

388
MMST3904-7-F

MMST3904-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 0.2A SC70-3

84331
DPLS350Y-13

DPLS350Y-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 50V 3A SOT89-3

5927
ZTX968

ZTX968

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 12V 4.5A E-LINE

18024000
AC857CQ-7

AC857CQ-7

Zetex Semiconductors (Diodes Inc.)

GENERAL PURPOSE TRANSISTOR SOT23

0
ZTX788A

ZTX788A

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 15V 3A E-LINE

44000
BC857A-7-F

BC857A-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 0.1A SOT23-3

166618000
FCX1151ATA

FCX1151ATA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 3A SOT-89

890

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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