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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
MJD32CQ-13

MJD32CQ-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 3A TO252-3L

2274
DSS5220V-7

DSS5220V-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 2A SOT-563

0
FCX1047ATA

FCX1047ATA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 10V 4A SOT-89

60015000
BC857B-7-F

BC857B-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 0.1A SOT23-3

9135
BCX56TA

BCX56TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 80V 1A SOT89

1474
AMBTA92Q-7

AMBTA92Q-7

Zetex Semiconductors (Diodes Inc.)

SS MID-PERF TRANSISTOR SOT23 T&R

6000
DXTP560BP5-13

DXTP560BP5-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 500V 0.15A POWERDI5

98
BC857BLP4-7

BC857BLP4-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 0.1A 3-DFN

3001
ZX5T1951GTA

ZX5T1951GTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 6A SOT223

2147483647
ZTX1053A

ZTX1053A

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 75V 3A E-LINE

2798000
FMMT455TA

FMMT455TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 140V 1A SOT23-3

1708857000
FZT790ATC

FZT790ATC

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 3A SOT223

8000
MMBT5401-7-F

MMBT5401-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 150V 0.6A SMD SOT23-3

238645
FZT1049ATA

FZT1049ATA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 25V 5A SOT-223

199
DRDN005W-7

DRDN005W-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 80V 0.5A SOT363

205246000
AC847BWQ-13

AC847BWQ-13

Zetex Semiconductors (Diodes Inc.)

GENERAL PURPOSE TRANSISTOR SOT32

10000
DXTP07040CFGQ-7

DXTP07040CFGQ-7

Zetex Semiconductors (Diodes Inc.)

PWR MID PERF TRANSISTOR POWERDI3

1990
ZXTN26020DMFTA

ZXTN26020DMFTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 1.5A 3DFN

33000
FZT790ATA

FZT790ATA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 3A SOT223

6801
BC857BLP4-7B

BC857BLP4-7B

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 0.1A DFN1006H4-3

50000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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