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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
ZTX690BSTZ

ZTX690BSTZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 2A E-LINE

0
ZXTP4001ZTA

ZXTP4001ZTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 1A

0
DNLS160V-7

DNLS160V-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SOT-563

21000
BC847CT-7-F

BC847CT-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.1A SOT-523

44338
DCP69A-16-13

DCP69A-16-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 1A SOT-223

349
ZXTN25050DFHTA

ZXTN25050DFHTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 50V 4A SOT23-3

2042
FMMT614TA

FMMT614TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 100V 0.5A SOT23-3

2147483647
FMMT723TA

FMMT723TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 1A SOT23-3

97804
FMMTL718TA

FMMTL718TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 1A SOT23-3

2322
BC858BW-7-F

BC858BW-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 30V 0.1A SC70-3

60000
FZT958TA

FZT958TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 400V 0.5A SOT-223

9963
ZTX951

ZTX951

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 4A E-LINE

1249848000
MMBTA56Q-7-F

MMBTA56Q-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 80V 0.5A SOT23-3

3
ZTX849STZ

ZTX849STZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 30V 5A E-LINE

8000
DXTP03200BP5-13

DXTP03200BP5-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 200V 2A POWERDI5

5000
FMMT720QTA

FMMT720QTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 1.5A SOT23-3

1880
DSS4220V-7

DSS4220V-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 2A SOT-563

23221000
2DB1386R-13

2DB1386R-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 5A SOT89-3

3314
FZT968TA

FZT968TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 12V 6A SOT-223

715
DXT751-13

DXT751-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 3A SOT89-3

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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