ample-chip ample-chip
RFQ
BOM

Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC847BLP4-7

BC847BLP4-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.1A 3-DFN

136215000
FMMTL618TA

FMMTL618TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 1.25A SOT23-3

345
FCX491QTA

FCX491QTA

Zetex Semiconductors (Diodes Inc.)

PWR MID PERF TRANSISTOR SOT89

0
FZT792ATA

FZT792ATA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 70V 2A SOT-223

7224
FZT857TA

FZT857TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 300V 3.5A SOT-223

1902
MMSTA06-7-F

MMSTA06-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 80V 0.5A SC70-3

341
ZXTN07045EFFTA

ZXTN07045EFFTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 4A SOT23F-3

18676
MMBT4403T-7-F

MMBT4403T-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 0.6A SOT523

35386
ZTX651STZ

ZTX651STZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 2A E-LINE

2709
2DD1766Q-13

2DD1766Q-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 32V 2A SOT89-3

0
ZXTN19020DFFTA

ZXTN19020DFFTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 6.5A SOT23F-3

5139000
FZT658TA

FZT658TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 400V 0.5A SOT-223

51206
2DC4617QLP-7

2DC4617QLP-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 50V 0.1A 3-DFN

6694
DPLS350E-13

DPLS350E-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 50V 3A SOT-223

7664
FCX593TA

FCX593TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 1A SOT-89

0
ZUMT491TA

ZUMT491TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SC70-3

0
ZTX1051A

ZTX1051A

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 4A E-LINE

4130
MMST6427-7-F

MMST6427-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 40V 0.5A SC70-3

25393000
MMBTA06-7-F

MMBTA06-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 80V 0.5A SOT23-3

157757
ZTX949STZ

ZTX949STZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 30V 4.5A E-LINE

936

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top