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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
ZTX696B

ZTX696B

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 180V 0.5A E-LINE

289540000
DSL12AW-7

DSL12AW-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 12V 2A SOT363

131918000
FZT705TC

FZT705TC

Zetex Semiconductors (Diodes Inc.)

TRANS PNP DARL 120V 2A SOT223

0
ZUMT717TA

ZUMT717TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 12V 1.25A SC70-3

13412000
MMBT4124-7-F

MMBT4124-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 25V 0.2A SMD SOT23-3

1378
DN350T05-7

DN350T05-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 350V 0.5A SOT23-3

0
ZXTN2040FTA

ZXTN2040FTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 1A SOT23-3

2147483647
FMMT493TA

FMMT493TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 1A SOT23-3

0
BSR33TA

BSR33TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 80V 1A SOT-89

684
BC846BW-7-F

BC846BW-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 65V 0.1A SC70-3

6880
BCX52TA

BCX52TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 1A SOT89

947
BCP5110TA

BCP5110TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 1A SOT223

28000
FCX690BTA

FCX690BTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 2A SOT-89

35577
FMMT617TC

FMMT617TC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 15V 3A SOT23-3

0
ZXTN649FTA

ZXTN649FTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 25V 3A SOT23

1213
ZTX758

ZTX758

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 400V 0.5A E-LINE

36000
ZXTN4004ZQTA

ZXTN4004ZQTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 150V 1A SOT89

0
ZTX853

ZTX853

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 4A E-LINE

6933
FMMTA06TA

FMMTA06TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 80V 0.5A SOT23-3

2147483647
ZXTP2013GTA

ZXTP2013GTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 5A SOT223

1601

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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