ample-chip ample-chip
RFQ
BOM

Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
FMMT593QTA

FMMT593QTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 1A SOT23-3

5228
ZXTN25012EFLTA

ZXTN25012EFLTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 12V 2A SOT23-3

1263
FZT690BTA

FZT690BTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 3A SOT-223

18661
MMBT3904T-7-F

MMBT3904T-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 0.2A SOT523

0
BCP5216TA

BCP5216TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 1A SOT223

7753
FCX591ATA

FCX591ATA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 1A SOT-89

693
ZXT13N15DE6TA

ZXT13N15DE6TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 15V 5A SOT23-6

2617
FZT751TC

FZT751TC

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 3A SOT223

0
MMBT2222ALP4-7B

MMBT2222ALP4-7B

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 0.6A 3DFN

186150
2DB1119S-13

2DB1119S-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 25V 1A SOT89-3

0
MMBTA06Q-7-F

MMBTA06Q-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 80V 0.5A SOT23

11255
BC847AT-7

BC847AT-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.1A SMD SOT-523

564
DZTA42-13

DZTA42-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 300V 0.5A SOT-223

78344
ZXTP2009ZTA

ZXTP2009ZTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 5.5A SOT89

50316000
ZXTP23140BFHTA

ZXTP23140BFHTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 140V 2.5A SOT23-3

51693000
ZXTP2012ZTA

ZXTP2012ZTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 4.3A SOT89

14982
BCX5616QTA

BCX5616QTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 80V 1A SOT-89

10931
ZTX1049A

ZTX1049A

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 25V 4A E-LINE

177794000
FMMT614TC

FMMT614TC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 100V 0.5A SOT23-3

0
DSS8110Y-7

DSS8110Y-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 1A SOT363

8983

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top