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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
FZT689BTA

FZT689BTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 3A SOT-223

9797
ZXTN25020DFHTA

ZXTN25020DFHTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 4.5A SOT23-3

930
FCX617TA

FCX617TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 15V 3A SOT-89

64728000
ZTX949

ZTX949

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 30V 4.5A E-LINE

0
DXT690BP5Q-13

DXT690BP5Q-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V HIGH GAIN PDI5

0
ZTX601BSTZ

ZTX601BSTZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 160V 1A E-LINE

0
DCX68-13

DCX68-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 1A SOT89-3

0
FMMT617TA

FMMT617TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 15V 3A SOT23-3

14215
FMMT491TA

FMMT491TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SOT23-3

29410
FZT853TA

FZT853TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 6A SOT-223

17861
FZT1051ATA

FZT1051ATA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 5A SOT-223

18600
FCX1053ATA

FCX1053ATA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 75V 3A SOT-89

1363000
MMBTA13-7-F

MMBTA13-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 30V 0.3A SOT23-3

94968
FZT491TA

FZT491TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SOT-223

997629000
ZXTN2031FTA

ZXTN2031FTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 50V 5A SOT23-3

7475
DXT13003EK-13

DXT13003EK-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 460V 1.5A TO252

437212500
MMBTA14-7-F

MMBTA14-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 30V 0.3A SOT23-3

9923
FMMT634TA

FMMT634TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 100V 0.9A SOT23-3

43405
FMMT634QTA

FMMT634QTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 100V 0.9A SOT23-3

1504015000
FMMT491QTC

FMMT491QTC

Zetex Semiconductors (Diodes Inc.)

SS MID-PERF TRANSISTOR SOT23 T&R

10000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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