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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC847B-7-F

BC847B-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.1A SOT23-3

43376
ZTX953STZ

ZTX953STZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 3.5A E-LINE

6000
ZXT10P12DE6TA

ZXT10P12DE6TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 12V 3A SOT23-6

1225
ZTX618

ZTX618

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 3.5A E-LINE

212724000
DXT2011P5-13

DXT2011P5-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 6A POWERDI5

21867
ZXTP2013ZTA

ZXTP2013ZTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 3.5A SOT89

16685000
MMBTA55-7-F

MMBTA55-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 0.5A SOT23-3

14404
BST52TA

BST52TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 80V 0.5A SOT-89

10955
ZXT10N50DE6TA

ZXT10N50DE6TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 50V 3A SOT23-6

2387
ZTX551STZ

ZTX551STZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 1A E-LINE

0
FMMTA42TA

FMMTA42TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 300V 0.2A SOT23-3

5060
ZTX415

ZTX415

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 0.5A E-LINE

0
ZXTP26020DMFTA

ZXTP26020DMFTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 1.25A DFN1411-3

708418000
ZTX857STZ

ZTX857STZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 300V 3A E-LINE

1331
BC856BW-7-F

BC856BW-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 65V 0.1A SC70-3

13866
2DA1774S-7-F

2DA1774S-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 50V 0.15A SOT523

84000
ZTX694BSTZ

ZTX694BSTZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 120V 0.5A E-LINE

0
ZXTPS720MCTA

ZXTPS720MCTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 3A DFN

29879000
DZT955-13

DZT955-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 140V 4A SOT-223

20252500
2DA1774R-7-F

2DA1774R-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 50V 0.15A SOT523

33853000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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