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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
ZXTN5551FLTA

ZXTN5551FLTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 160V 0.6A SOT23-3

105575000
MMST2907A-7-F

MMST2907A-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 0.6A SC70-3

0
FMMT549ATA

FMMT549ATA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 30V 1A SOT23-3

2147483647
SXTA42TA

SXTA42TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 300V 0.5A SOT89

12517
FMMT619TC

FMMT619TC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 50V 2A SOT23-3

180000
ZTX690B

ZTX690B

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 2A E-LINE

664432000
MMBT3904FZ-7B

MMBT3904FZ-7B

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 0.2A X2-DFN060

0
MMSTA56Q-7-F

MMSTA56Q-7-F

Zetex Semiconductors (Diodes Inc.)

GENERAL PURPOSE TRANSISTOR SOT32

270527000
ZTX851STZ

ZTX851STZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 5A E-LINE

679
FZT600BTA

FZT600BTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 140V 2A SOT223

2147483647
DXT3906-13

DXT3906-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 0.2A SOT89-3

0
DN0150ALP4-7

DN0150ALP4-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 50V 0.1A DFN1006H4-3

87000
ZTX694B

ZTX694B

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 120V 0.5A E-LINE

13464000
DSS5220T-7

DSS5220T-7

Zetex Semiconductors (Diodes Inc.)

SS LOW SAT TRANSISTOR SOT23 T&R

18000
ZXTP2012GTA

ZXTP2012GTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 5.5A SOT223

11253
DSS2540M-7B

DSS2540M-7B

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 0.5A DFN1006-3

68895
FMMT718TC

FMMT718TC

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 1.5A SOT23-3

10000
DXTP3C60PS-13

DXTP3C60PS-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60VPOWERDI5060-8

3972
MMST3906-7-F

MMST3906-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 0.2A SC70-3

50836
ZTX958

ZTX958

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 400V 0.5A E-LINE

25016000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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