ample-chip ample-chip
RFQ
BOM

Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
MMST5401-7-F

MMST5401-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 150V 0.2A SC70-3

10804
DSS5220T-13

DSS5220T-13

Zetex Semiconductors (Diodes Inc.)

SS LOW SAT TRANSISTOR SOT23 T&R

10000
BCV46TA

BCV46TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP DARL 60V 0.5A SOT23-3

4807
MMBT3906LP-7B

MMBT3906LP-7B

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 0.2A DFN1006-3

30301
FZT589TA

FZT589TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 30V 1A SOT223

1016
FMMT619TA

FMMT619TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 50V 2A SOT23-3

38166
ZXT690BKTC

ZXT690BKTC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 3A D-PAK

27119
DSS4160TQ-7

DSS4160TQ-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V LOW SAT SOT23

2269
BC856B-13-F

BC856B-13-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 65V 0.1A SOT-23

1947
ZXTN19020DGTA

ZXTN19020DGTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 9A SOT223

121024000
ZTX788B

ZTX788B

Zetex Semiconductors (Diodes Inc.)

TRANS PNP HG -15V -2000MA E-LINE

356832000
ZXTP2008ZTA

ZXTP2008ZTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 30V 5.5A SOT89

2147483647
ZXTN2005ZQTA

ZXTN2005ZQTA

Zetex Semiconductors (Diodes Inc.)

PWR LOW SAT TRANSISTOR SOT89

0
ZXTP19060CGTA

ZXTP19060CGTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 5A SOT223

0
FMMT596TA

FMMT596TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 200V 0.3A SOT23-3

1717
FMMT720TA

FMMT720TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 1.5A SOT23-3

41227
ZXT11N20DFTA

ZXT11N20DFTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 2.5A SOT23-3

10590
AC847CQ-7

AC847CQ-7

Zetex Semiconductors (Diodes Inc.)

GENERAL PURPOSE TRANSISTOR SOT23

0
FMMT491ATA

FMMT491ATA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 1A SOT23-3

2342
2DB1188P-13

2DB1188P-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 32V 2A SOT89-3

1010

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top