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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
DSS5320T-7

DSS5320T-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 2A SOT23

3660
ZXTP19100CGTA

ZXTP19100CGTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 2A SOT223

201047000
DZT491-13

DZT491-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SOT-223

27317500
DXT13003DK-13

DXT13003DK-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 450V 1.5A TO252

0
FMMT459QTA

FMMT459QTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 450V 0.15A SOT23-3

0
ZTX795ASTZ

ZTX795ASTZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 140V 0.5A E-LINE

0
DCX69-16-13

DCX69-16-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 1A SOT89-3

0
FCX717TA

FCX717TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 12V 3A SOT89

49059000
2DD2661-13

2DD2661-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 12V 2A SOT89-3

31315000
ZX5T951GTA

ZX5T951GTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 5.5A SOT-223

2147483647
FCX495TC

FCX495TC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 150V 1A SOT89

0
ZXTN2010A

ZXTN2010A

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 4.5A TO92-3

9441
ZXTN2038FTA

ZXTN2038FTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SOT23-3

415542000
DSS3540M-7B

DSS3540M-7B

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 0.5A DFN1006-3

4281
DPLS320A-7

DPLS320A-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 2A SOT23-3

3000
ZXTP01500BGTC

ZXTP01500BGTC

Zetex Semiconductors (Diodes Inc.)

PWR HI VOLTAGE TRANSISTOR SOT223

2147483647
2DD2656-7

2DD2656-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 30V 1A SOT-323

9435
FMMT491TC

FMMT491TC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SOT23-3

635940000
DSS30101L-7

DSS30101L-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 30V 1A SOT23

109000
DP0150BLP4-7

DP0150BLP4-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 50V 0.1A DFN1006H4

57000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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