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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
ZXTN19100CFFTA

ZXTN19100CFFTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 4.5A SOT23F-3

25576
DP0150ALP4-7

DP0150ALP4-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 50V 0.1A X1DFN10063

126000
FMMT560TC

FMMT560TC

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 500V 0.15A SOT23-3

19371
ZXTP4003GTA

ZXTP4003GTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 1A SOT223

0
BCX38C

BCX38C

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 60V 0.8A TO92-3

7004
BCX5216TA

BCX5216TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 1A SOT89

44366000
DXT2012P5-13

DXT2012P5-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 5.5A POWERDI5

2811
ZTX749

ZTX749

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 25V 2A E-LINE

1174
ZTX758STZ

ZTX758STZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 400V 0.5A E-LINE

0
FMMT458QTA

FMMT458QTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 400V 0.225A SOT23

2147483647
ZXTP5401FLTA

ZXTP5401FLTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 150V 0.6A SOT23-3

12000
ZX5T853GTA

ZX5T853GTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 6A SOT-223

321591000
ZTX1049ASTZ

ZTX1049ASTZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 25V 4A E-LINE

0
BC857AW-7-F

BC857AW-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 0.1A SC70-3

1675
FMMT591ATA

FMMT591ATA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 1A SOT23-3

83763
FCX605TA

FCX605TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 120V 1A SOT-89

1568
FZT493TA

FZT493TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 1A SOT-223

22102
2DA1971Q-7

2DA1971Q-7

Zetex Semiconductors (Diodes Inc.)

PWR HI VOLTAGE TRANSISTOR SOT89

0
DSS4320T-7

DSS4320T-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 2A SOT-23

4491
FCX495QTA

FCX495QTA

Zetex Semiconductors (Diodes Inc.)

PWR HI VOLTAGE TRANSISTOR SOT89

339000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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