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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC847BFA-7B

BC847BFA-7B

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.1A X2-DFN0806-3

740050000
ZTX692B

ZTX692B

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 70V 1A E-LINE

4461
DSS5240V-7

DSS5240V-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 1.8A SOT-563

377
ZXTN5551GTA

ZXTN5551GTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 160V 0.6A SOT223

1238
DZT5551-13

DZT5551-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 160V 0.6A SOT-223

2147483647
BC847BLP-7B

BC847BLP-7B

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.1A DFN1006-3

2147483647
ZUMT591TA

ZUMT591TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 1A SC70-3

15000
ZX5T851ASTZ

ZX5T851ASTZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 4.5A TO92-3

0
ZTX851

ZTX851

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 5A E-LINE

14941
ZTX1048A

ZTX1048A

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 17.5V 4A E-LINE

24000
FZT751TA

FZT751TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 3A SOT-223

5194
DXT5401-13

DXT5401-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 150V 0.6A SOT89-3

7500
ZXTPS717MCTA

ZXTPS717MCTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 12V 4A DFN

349012000
DXTN07045DFG-7

DXTN07045DFG-7

Zetex Semiconductors (Diodes Inc.)

PWR MID PERF TRANSISTOR POWERDI3

8758000
ZTX1048ASTZ

ZTX1048ASTZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 17.5V 4A E-LINE

0
FMMT413TD

FMMT413TD

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 50V 0.1A SOT23-3

400545000
2DD1766P-13

2DD1766P-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 32V 2A SOT89-3

36
MMBT3906FZ-7B

MMBT3906FZ-7B

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 0.2A X2-DFN060

196660000
DJT4030P-13

DJT4030P-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 3A SOT-223

0
FZT605TC

FZT605TC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 120V 1.5A SOT223

12000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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