Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
APT13005SU-G1

APT13005SU-G1

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 450V 3.2A TO126

0

ZUMT720TA

ZUMT720TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 0.75A SC70-3

2

FMMTA56TA

FMMTA56TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 80V 0.5A SOT23-3

300033000

ZXTP05120HFFTA

ZXTP05120HFFTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP DARL 120V 1A SOT23F-3

41625

ZXTN2007GTA

ZXTN2007GTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 30V 7A SOT223

5592

BC56-16PA-7

BC56-16PA-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 80V 1A UDFN

4095

FMMTA14TA

FMMTA14TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 40V 0.3A SOT23-3

0

2DC4617R-7-F

2DC4617R-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 50V 0.15A SOT523

998957000

FZT692BTA

FZT692BTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 70V 2A SOT-223

28893

FZT869TA

FZT869TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 25V 7A SOT-223

21759

FZT796ATA

FZT796ATA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 200V 0.5A SOT-223

51313

ZXTP25100CZTA

ZXTP25100CZTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 1A SOT89

2686

ZTX550STZ

ZTX550STZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 1A E-LINE

697

BC817-25-7-F

BC817-25-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 500MA SOT23-3

28177

MMBTA42-7-F

MMBTA42-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 300V 0.5A SOT23-3

0

BCW66HTA

BCW66HTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.8A SOT23-3

2147483647

ZXTN08400BFFTA

ZXTN08400BFFTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 400V 0.5A SOT23F-3

55654

ZTX605STZ

ZTX605STZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 120V 1A E-LINE

0

ZXTN26070CV-7

ZXTN26070CV-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 70V 2A SOT666

24000

ZXTP19020CFFTA

ZXTP19020CFFTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 5A SOT23F-3

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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