Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SC4131

2SC4131

Sanken Electric Co., Ltd.

TRANS NPN 50V 15A TO3PF

0

2SB1258

2SB1258

Sanken Electric Co., Ltd.

TRANS PNP DARL 100V 6A TO220F

3653

2SA1568

2SA1568

Sanken Electric Co., Ltd.

TRANS PNP 60V 12A TO220F

0

2SC3284

2SC3284

Sanken Electric Co., Ltd.

TRANS NPN 150V 14A TO3P

0

2SC4024

2SC4024

Sanken Electric Co., Ltd.

TRANS NPN 50V 10A TO220F

0

2SA1294

2SA1294

Sanken Electric Co., Ltd.

TRANS PNP 230V 15A TO-3P

1288

2SD2082

2SD2082

Sanken Electric Co., Ltd.

TRANS NPN DARL 120V 16A TO3PF

0

2SC4140

2SC4140

Sanken Electric Co., Ltd.

TRANS NPN 400V 18A TO3P

3710

2SC4468

2SC4468

Sanken Electric Co., Ltd.

TRANS NPN 140V 10A TO3P

1503

2SC3856

2SC3856

Sanken Electric Co., Ltd.

TRANS NPN 180V 15A TO-3P

641

2SB1383

2SB1383

Sanken Electric Co., Ltd.

TRANS PNP DARL 120V 25A TO3P

707

2SA1909

2SA1909

Sanken Electric Co., Ltd.

TRANS PNP 140V 10A TO3PF

138

2SC3835

2SC3835

Sanken Electric Co., Ltd.

TRANS NPN 120V 7A TO3P

1895

2SD2015

2SD2015

Sanken Electric Co., Ltd.

TRANS NPN DARL 120V 4A TO220F

0

STD03P

STD03P

Sanken Electric Co., Ltd.

TRANS PNP DARL 160V 15A TO-3P-5

450

STD01N

STD01N

Sanken Electric Co., Ltd.

TRANS NPN DARL 150V 10A TO-3P-5

0

2SA1668

2SA1668

Sanken Electric Co., Ltd.

TRANS PNP 200V 2A TO220F

2931

2SA1859A

2SA1859A

Sanken Electric Co., Ltd.

TRANS PNP 180V 2A TO220F

0

2SA2223A

2SA2223A

Sanken Electric Co., Ltd.

TRANS PNP 260V 15A TO-3P

98

2SA1303

2SA1303

Sanken Electric Co., Ltd.

TRANS PNP 150V 14A TO3P

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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