Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SC2922

2SC2922

Sanken Electric Co., Ltd.

TRANS NPN 180V 17A MT-200

0

2SA1667

2SA1667

Sanken Electric Co., Ltd.

TRANS PNP 150V 2A TO220F

627

2SB1559

2SB1559

Sanken Electric Co., Ltd.

TRANS PNP DARL 150V 8A TO3P

289

2SC4518A

2SC4518A

Sanken Electric Co., Ltd.

TRANS NPN 550V 5A TO220F

0

2SA1746

2SA1746

Sanken Electric Co., Ltd.

TRANS PNP 50V 12A TO3PF

0

2SC4300

2SC4300

Sanken Electric Co., Ltd.

TRANS NPN 800V 5A TO3PF

0

2SC6011A

2SC6011A

Sanken Electric Co., Ltd.

TRANS NPN 230V 15A TO3P

246

2SA1695

2SA1695

Sanken Electric Co., Ltd.

TRANS PNP 140V 10A TO3P

862

2SA1725

2SA1725

Sanken Electric Co., Ltd.

TRANS PNP 80V 6A TO220F

608

2SC4546

2SC4546

Sanken Electric Co., Ltd.

TRANS NPN 400V 7A TO220F

3653

2SD2014

2SD2014

Sanken Electric Co., Ltd.

TRANS NPN DARL 80V 4A TO220F

5049

2SD2562

2SD2562

Sanken Electric Co., Ltd.

TRANS NPN DARL 150V 15A TO3PF

0

2SC3858

2SC3858

Sanken Electric Co., Ltd.

TRANS NPN 200V 17A MT-200

0

2SC4445

2SC4445

Sanken Electric Co., Ltd.

TRANS NPN 800V 3A TO3PF

0

2SC5071

2SC5071

Sanken Electric Co., Ltd.

TRANS NPN 400V 12A TO-220F

1203

2SA2151

2SA2151

Sanken Electric Co., Ltd.

TRANS PNP 200V 15A TO3P

0

2SC4304

2SC4304

Sanken Electric Co., Ltd.

TRANS NPN 800V 3A TO220F

2732

2SB1648

2SB1648

Sanken Electric Co., Ltd.

TRANS PNP DARL 150V 17A MT200

0

2SA1295

2SA1295

Sanken Electric Co., Ltd.

TRANS PNP 230V 17A MT200

0

2SA1215

2SA1215

Sanken Electric Co., Ltd.

TRANS PNP 160V 15A MT-200

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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