Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SC4495

2SC4495

Sanken Electric Co., Ltd.

TRANS NPN 50V 3A TO220F

2665

2SC3927

2SC3927

Sanken Electric Co., Ltd.

TRANS NPN 550V 10A TO3P

0

2SC3263

2SC3263

Sanken Electric Co., Ltd.

TRANS NPN 230V 15A TO-3P

734

2SC4511

2SC4511

Sanken Electric Co., Ltd.

TRANS NPN 80V 6A TO220F

0

2SA1693

2SA1693

Sanken Electric Co., Ltd.

TRANS PNP 80V 6A TO3P

192

2SC4886

2SC4886

Sanken Electric Co., Ltd.

TRANS NPN 150V 14A TO-3PF

0

2SC4388

2SC4388

Sanken Electric Co., Ltd.

TRANS NPN 180V 15A TO3PF

0

2SC5287

2SC5287

Sanken Electric Co., Ltd.

TRANS NPN 550V 5A TO3P

0

2SD2389

2SD2389

Sanken Electric Co., Ltd.

TRANS NPN DARL 150V 8A TO3P

245

2SD1785

2SD1785

Sanken Electric Co., Ltd.

TRANS NPN DARL 120V 6A TO220F

0

2SA1386

2SA1386

Sanken Electric Co., Ltd.

TRANS PNP 160V 15A TO3P

1028

2SA1907

2SA1907

Sanken Electric Co., Ltd.

TRANS PNP 80V 6A TO3PF

0

2SA1488

2SA1488

Sanken Electric Co., Ltd.

TRANS PNP 80V 4A TO220F

1118

2SD1796

2SD1796

Sanken Electric Co., Ltd.

TRANS NPN DARL 60V 4A TO220F

2

2SA1694

2SA1694

Sanken Electric Co., Ltd.

TRANS PNP 120V 8A TO3P

0

2SC3852A

2SC3852A

Sanken Electric Co., Ltd.

TRANS NPN 80V 3A TO220F

18

2SD2083

2SD2083

Sanken Electric Co., Ltd.

TRANS NPN DARL 120V 25A TO-3P

179

2SB1649

2SB1649

Sanken Electric Co., Ltd.

TRANS PNP DARL 150V 15A TO3PF

0

STD01P

STD01P

Sanken Electric Co., Ltd.

TRANS PNP DARL 150V 10A TO-3P-5

0

2SA1492

2SA1492

Sanken Electric Co., Ltd.

TRANS PNP 180V 15A TO-3P

300

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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