Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SD2439

2SD2439

Sanken Electric Co., Ltd.

TRANS NPN DARL 150V 10A TO3PF

0

2SD2081

2SD2081

Sanken Electric Co., Ltd.

TRANS NPN DARL 120V 10A TO220F

2936

2SA1567

2SA1567

Sanken Electric Co., Ltd.

TRANS PNP 50V 12A TO220F

0

STD03N

STD03N

Sanken Electric Co., Ltd.

TRANS NPN DARL 160V 15A TO-3P-5

383

2SC5100

2SC5100

Sanken Electric Co., Ltd.

TRANS NPN 120V 8A TO3PF

1833

2SB1351

2SB1351

Sanken Electric Co., Ltd.

TRANS PNP DARL 60V 12A TO220F

3146

2SD2401

2SD2401

Sanken Electric Co., Ltd.

TRANS NPN DARL 150V 12A MT200

89

2SD2560

2SD2560

Sanken Electric Co., Ltd.

TRANS NPN DARL 150V 15A TO-3P

702

2SC4381

2SC4381

Sanken Electric Co., Ltd.

TRANS NPN 150V 2A TO220F

3432

2SA1859

2SA1859

Sanken Electric Co., Ltd.

TRANS PNP 150V 2A TO220F

0

2SC4153

2SC4153

Sanken Electric Co., Ltd.

TRANS NPN 120V 7A TO220F

3103

2SC4518

2SC4518

Sanken Electric Co., Ltd.

TRANS NPN 550V 5A TO220F

0

2SB1257

2SB1257

Sanken Electric Co., Ltd.

TRANS PNP DARL 60V 4A TO220F

3030

2SD2438

2SD2438

Sanken Electric Co., Ltd.

TRANS NPN DARL 150V 8A TO3PF

0

2SC2921

2SC2921

Sanken Electric Co., Ltd.

TRANS NPN 160V 15A MT200

135

2SC4466

2SC4466

Sanken Electric Co., Ltd.

TRANS NPN 80V 6A TO3P

487

2SB1647

2SB1647

Sanken Electric Co., Ltd.

TRANS PNP DARL 150V 15A TO-3P

252

2SB1259

2SB1259

Sanken Electric Co., Ltd.

TRANS PNP DARL 120V 10A TO220F

949

2SD2641

2SD2641

Sanken Electric Co., Ltd.

TRANS NPN DARL 110V 6A TO3P

67

2SA1186

2SA1186

Sanken Electric Co., Ltd.

TRANS PNP 150V 10A MT-100 TO-3P

478

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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