Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SA1216

2SA1216

Sanken Electric Co., Ltd.

TRANS PNP 180V 17A MT-200

0

2SC4883

2SC4883

Sanken Electric Co., Ltd.

TRANS NPN 150V 2A TO220F

0

2SB1560

2SB1560

Sanken Electric Co., Ltd.

TRANS PNP DARL 150V 10A TO-3P

1459

2SD2017

2SD2017

Sanken Electric Co., Ltd.

TRANS NPN DARL 250V 6A TO220F

1510

2SC4467

2SC4467

Sanken Electric Co., Ltd.

TRANS NPN 120V 8A TO3P

812

2SA1494

2SA1494

Sanken Electric Co., Ltd.

TRANS PNP 200V 17A MT200

61

2SA1673

2SA1673

Sanken Electric Co., Ltd.

TRANS PNP 180V 15A TO3PF

463

2SC3851

2SC3851

Sanken Electric Co., Ltd.

TRANS NPN 60V 4A TO-220F

2159

2SC5099

2SC5099

Sanken Electric Co., Ltd.

TRANS NPN 80V 6A TO3PF

0

2SC3852

2SC3852

Sanken Electric Co., Ltd.

TRANS NPN 60V 3A TO220F

711

2SC3851A

2SC3851A

Sanken Electric Co., Ltd.

TRANS NPN 80V 4A TO220F

3499

2SC6145

2SC6145

Sanken Electric Co., Ltd.

TRANS NPN 230V 15A TO3P

648

2SC6145A

2SC6145A

Sanken Electric Co., Ltd.

TRANS NPN 260V 15A TO-3P

588

2SD2016

2SD2016

Sanken Electric Co., Ltd.

TRANS NPN DARL 200V 3A TO220F

3271

2SC4301

2SC4301

Sanken Electric Co., Ltd.

TRANS NPN 800V 7A TO3PF

23

2SC4138

2SC4138

Sanken Electric Co., Ltd.

TRANS NPN 400V 10A TO3P

0

2SC5130

2SC5130

Sanken Electric Co., Ltd.

TRANS NPN 400V 5A TO220F

20

2SC4883A

2SC4883A

Sanken Electric Co., Ltd.

TRANS NPN 180V 2A TO220F

0

2SD2045

2SD2045

Sanken Electric Co., Ltd.

TRANS NPN DARL 120V 6A TO3PF

0

2SC3519

2SC3519

Sanken Electric Co., Ltd.

TRANS NPN 160V 15A TO3P

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top