Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SC4382

2SC4382

Sanken Electric Co., Ltd.

TRANS NPN 200V 2A TO220F

1554

2SB1420

2SB1420

Sanken Electric Co., Ltd.

TRANS PNP DARL 120V 16A TO3P

0

2SC3519A

2SC3519A

Sanken Electric Co., Ltd.

TRANS NPN 180V 15A TO-3P

0

2SA1908

2SA1908

Sanken Electric Co., Ltd.

TRANS PNP 120V 8A TO3PF

75

2SA1860

2SA1860

Sanken Electric Co., Ltd.

TRANS PNP 150V 14A TO-3PF

1779

2SD2390

2SD2390

Sanken Electric Co., Ltd.

TRANS NPN DARL 150V 10A TO-3P

326

2SD2643

2SD2643

Sanken Electric Co., Ltd.

TRANS NPN DARL 110V 6A TO3PF

0

2SC6011

2SC6011

Sanken Electric Co., Ltd.

TRANS NPN 200V 15A TO3P

965

2SC5101

2SC5101

Sanken Electric Co., Ltd.

TRANS NPN 140V 10A TO3PF

0

2SA2223

2SA2223

Sanken Electric Co., Ltd.

TRANS PNP 230V 15A TO3P

0

2SA1386A

2SA1386A

Sanken Electric Co., Ltd.

TRANS PNP 180V 15A TO-3P

1842

2SB1382

2SB1382

Sanken Electric Co., Ltd.

TRANS PNP DARL 120V 16A TO3PF

372

2SB1588

2SB1588

Sanken Electric Co., Ltd.

TRANS PNP DARL 150V 10A TO3PF

0

2SC4706

2SC4706

Sanken Electric Co., Ltd.

TRANS NPN 600V 14A TO3P

0

2SB1587

2SB1587

Sanken Electric Co., Ltd.

TRANS PNP DARL 150V 8A TO3PF

0

2SC2837

2SC2837

Sanken Electric Co., Ltd.

TRANS NPN 150V 10A TO-3P

1630

2SD2141

2SD2141

Sanken Electric Co., Ltd.

TRANS NPN DARL 380V 6A TO220F

0

2SD2642

2SD2642

Sanken Electric Co., Ltd.

TRANS NPN 110V 6A TO220F

0

2SA2151A

2SA2151A

Sanken Electric Co., Ltd.

TRANS PNP 230V 15A TO3P

294

2SA1488A

2SA1488A

Sanken Electric Co., Ltd.

TRANS PNP 80V 4A TO220F

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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