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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
BFP720H6327XTSA1

BFP720H6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 4.7V 45GHZ SOT343

2935
NTE2401

NTE2401

NTE Electronics, Inc.

RF TRANS PNP 30V 450MHZ SOT23

1362
BFP520H6327XTSA1

BFP520H6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 3.5V 45GHZ SOT343-4

4012
BFU690F,115

BFU690F,115

NXP Semiconductors

RF TRANS NPN 5.5V 18GHZ 4DFP

29458
NTE316

NTE316

NTE Electronics, Inc.

RF TRANS NPN 15V 1.4GHZ TO72

168
BFR340L3E6327XTMA1

BFR340L3E6327XTMA1

IR (Infineon Technologies)

BFR340 - LOW-NOISE SI TRANSISTOR

481666
BFR181E6327HTSA1

BFR181E6327HTSA1

IR (Infineon Technologies)

RF TRANS NPN 12V 8GHZ SOT23-3

4764
MMBTH24-7-F

MMBTH24-7-F

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 40V 400MHZ SOT23-3

300818000
BFU630F,115

BFU630F,115

NXP Semiconductors

RF TRANS NPN 5.5V 21GHZ 4DFP

3632
MRF314

MRF314

Metelics (MACOM Technology Solutions)

RF TRANS NPN 35V 211-07

116
NE85619-T1-A

NE85619-T1-A

Flip Electronics

RF SMALL SIGNAL BIPOLAR TRANSIST

0
BFR183E6327HTSA1

BFR183E6327HTSA1

IR (Infineon Technologies)

RF TRANS NPN 12V 8GHZ SOT23-3

7571
HN3C10FUTE85LF

HN3C10FUTE85LF

Toshiba Electronic Devices and Storage Corporation

RF TRANS 2 NPN 12V 7GHZ US6

111
BFP720FESDH6327XTSA1

BFP720FESDH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 4.7V 45GHZ 4TSFP

0
MT3S113(TE85L,F)

MT3S113(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

RF TRANS NPN 5.3V 12.5GHZ SMINI

5819
2SC5086-Y,LF

2SC5086-Y,LF

Toshiba Electronic Devices and Storage Corporation

RF TRANS NPN 12V 7GHZ SSM

0
BFS17PE6752HTSA1

BFS17PE6752HTSA1

IR (Infineon Technologies)

RF SMALL SIGNAL TRANSISTOR

0
BFU530AR

BFU530AR

NXP Semiconductors

RF TRANS NPN 12V 11GHZ TO236AB

35450
15GN03FA-TL-H

15GN03FA-TL-H

RF SMALL SIGNAL BIPOLAR TRANSIST

86000
NTE319

NTE319

NTE Electronics, Inc.

RF TRANS NPN 20V TO72

40

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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