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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
MMBTH10M3T5G

MMBTH10M3T5G

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 25V 650MHZ SOT723

2147483647
BFP720ESDH6327XTSA1

BFP720ESDH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 4.7V 43GHZ SOT343

2965
BFU520AR

BFU520AR

NXP Semiconductors

RF TRANS NPN 12V 10GHZ TO236AB

2232
HFA3046B

HFA3046B

Intersil (Renesas Electronics America)

RF SMALL SIGNAL TRANSISTOR

0
2SC563200L

2SC563200L

Panasonic

RF TRANS NPN 8V 1.1GHZ SMINI3-G1

4098
BFP420H6801

BFP420H6801

IR (Infineon Technologies)

RF TRANSISTOR, X BAND, NPN

66727
HFA3135IHZ96

HFA3135IHZ96

Intersil (Renesas Electronics America)

RF TRANS 2 PNP 9V 7GHZ SOT23-6

0
BFR93A215

BFR93A215

NXP Semiconductors

RF BIPOLAR TRANSISTOR

12288
NTE77

NTE77

NTE Electronics, Inc.

RF TRANS NPN 30V 1.8GHZ TO39

72
BFR182E-6327

BFR182E-6327

IR (Infineon Technologies)

RF N-CHANNEL MOSFET

89000
BF959RL1G

BF959RL1G

RF SMALL SIGNAL TRANSISTOR

16000
BFP740E6327

BFP740E6327

IR (Infineon Technologies)

RF TRANSISTOR, X BAND, NPN

31830
BFP182WE6327

BFP182WE6327

IR (Infineon Technologies)

RF TRANSISTOR, L BAND, NPN

27000
NSVF3007SG3T1G

NSVF3007SG3T1G

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 12V 8GHZ 3MCPH

0
PN3563 PBFREE

PN3563 PBFREE

Central Semiconductor

RF TRANS NPN 12V TO92

0
MSC2295-BT1G

MSC2295-BT1G

RF SMALL SIGNAL TRANSISTOR

21000
BFR92PE6327HTSA1

BFR92PE6327HTSA1

IR (Infineon Technologies)

RF TRANS NPN 15V 5GHZ SOT23-3

990
2SC5227A-4-TB-E

2SC5227A-4-TB-E

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 10V 7GHZ 3CP

2087111000
BFP450H6327

BFP450H6327

RF TRANSISTOR, L BAND, NPN

6000
2SC4713KT146S

2SC4713KT146S

ROHM Semiconductor

RF TRANS NPN 6V 800MHZ SMT3

1198

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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