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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
BFP420E6327

BFP420E6327

IR (Infineon Technologies)

RF TRANSISTOR, X BAND, NPN

202291
2SC5086-O,LF

2SC5086-O,LF

Toshiba Electronic Devices and Storage Corporation

RF TRANS NPN 12V 7GHZ SSM

64950
BFU550AR

BFU550AR

NXP Semiconductors

RF TRANS NPN 12V 11GHZ TO236AB

2029
BFP720ESDH6327

BFP720ESDH6327

IR (Infineon Technologies)

RF TRANSISTOR, X BAND, NPN

150210
BFU550XAR

BFU550XAR

NXP Semiconductors

RF TRANS NPN 12V 11GHZ SOT143B

16535
BFP540ESDH6327XTSA1

BFP540ESDH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 5V 30GHZ SOT343-4

5417
PH2731-75L

PH2731-75L

Metelics (MACOM Technology Solutions)

RF TRANS NPN 65V

0
MMBTH10-7-F

MMBTH10-7-F

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 25V 650MHZ SOT23-3

2900
BFP405FH6327XTSA1

BFP405FH6327XTSA1

IR (Infineon Technologies)

TRANS RF NPN 4.5V 25MA TSFP-4

0
KSC2757OMTF

KSC2757OMTF

RF SMALL SIGNAL TRANSISTOR

16000
BFG505,215

BFG505,215

NXP Semiconductors

BFG505 - UPN 9 GHZ WIDEBAND TRAN

0
CPH6021-TL-H

CPH6021-TL-H

RF SMALL SIGNAL BIPOLAR TRANSIST

105000
NESG340034-T1-A

NESG340034-T1-A

Renesas Electronics America

RF BIPOLAR TRANSISTOR

161000
MRF393

MRF393

Metelics (MACOM Technology Solutions)

RF TRANS 2NPN EMITTR 30V 744A-01

20
NTE2402

NTE2402

NTE Electronics, Inc.

RF TRANS NPN 15V 5GHZ SOT23

1122
2SA1748GRL

2SA1748GRL

Panasonic

RF TRANS PNP 50V 250MHZ SMINI3

2596
KSC1393OBU

KSC1393OBU

RF SMALL SIGNAL TRANSISTOR

0
2SC4853A-4-TL-E

2SC4853A-4-TL-E

SMALL SIGNAL BIPOLAR TRANSISTOR

126000
12A01C-TB-E

12A01C-TB-E

Sanyo Denki SanUPS Products

TRANSISTOR

96000
BFU520235

BFU520235

NXP Semiconductors

NPN RF TRANSISTOR

0

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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