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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
BFU520XRR

BFU520XRR

NXP Semiconductors

RF TRANS NPN 12V 10.5GHZ SOT143R

4366
NSVF4020SG4T1G

NSVF4020SG4T1G

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 8V 16GHZ SC82FL/MCP

96224000
2SC6023-TR-E

2SC6023-TR-E

NPN 35MA 3.5V FT=14.5G

39000
MT3S113P(TE12L,F)

MT3S113P(TE12L,F)

Toshiba Electronic Devices and Storage Corporation

RF TRANS NPN 5.3V 7.7GHZ PW-MINI

1818
2SC393400L

2SC393400L

Panasonic

RF TRANS NPN 12V 4.5GHZ SMINI3

3952
NTE311

NTE311

NTE Electronics, Inc.

RF TRANS NPN 30V 800MHZ TO39

64
KSC2756OMTF

KSC2756OMTF

RF SMALL SIGNAL TRANSISTOR

0
MCH4016-TL-H

MCH4016-TL-H

TRANSISTOR

174000
HFA3046BZ

HFA3046BZ

Intersil (Renesas Electronics America)

RF TRANS 5 NPN 12V 8GHZ 14SOIC

0
NTE2403

NTE2403

NTE Electronics, Inc.

RF TRANS PNP 15V 5GHZ SOT23

508
BFU550WX

BFU550WX

NXP Semiconductors

RF TRANS NPN 12V 11GHZ SOT323-3

11323
BFY90 PBFREE

BFY90 PBFREE

Central Semiconductor

RF TRANS NPN 15V 1.4GHZ TO72

2185
MAX2602ESA+T

MAX2602ESA+T

Maxim Integrated

RF TRANS NPN 15V 1GHZ 8SOIC

0
BFP840FESDH6327XTSA1

BFP840FESDH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 2.6V 85GHZ 4TSFP

20702
BF799WH6327XTSA1

BF799WH6327XTSA1

IR (Infineon Technologies)

RF SMALL SIGNAL TRANSISTOR

608000
BFP420H6433XTMA1

BFP420H6433XTMA1

IR (Infineon Technologies)

RF TRANS NPN 5V 25GHZ SOT343

1920
NTE236

NTE236

NTE Electronics, Inc.

RF TRANS NPN 25V TO220

226
NTE235

NTE235

NTE Electronics, Inc.

RF TRANS NPN 75V 150MHZ TO220

4791
PH3134-55L

PH3134-55L

Metelics (MACOM Technology Solutions)

RF TRANS NPN 65V

20
MT3S111TU,LF

MT3S111TU,LF

Toshiba Electronic Devices and Storage Corporation

RF SIGE NPN BIPOLAR TRANSISTOR N

3372

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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