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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
HFA3102BZ

HFA3102BZ

Intersil (Renesas Electronics America)

RF TRANS 6 NPN 12V 10GHZ 14SOIC

0
BFU530WX

BFU530WX

NXP Semiconductors

RF TRANS NPN 12V 11GHZ SOT323-3

2310
BFQ19SH6359XTMA1

BFQ19SH6359XTMA1

IR (Infineon Technologies)

BFQ19S - RF SMALL SIGNAL BIPOLAR

0
RX1214B300YI112

RX1214B300YI112

NXP Semiconductors

RF POWER TRANSISTORS

15
BFP640E6327BTSA1

BFP640E6327BTSA1

IR (Infineon Technologies)

RF TRANS NPN 4.5V 40GHZ SOT343-4

361
MRF1150MB

MRF1150MB

Metelics (MACOM Technology Solutions)

TRANS NPN 150W 906MHZ-1215MHZ

0
MRF327

MRF327

Metelics (MACOM Technology Solutions)

RF TRANS NPN 33V 316-01

1
MRF316

MRF316

Metelics (MACOM Technology Solutions)

TRANS RF NPN 35V 9A 316-01

0
2SC2714-O(TE85L,F)

2SC2714-O(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

RF TRANS NPN 30V 550MHZ SMINI

4229
BFP405H6327

BFP405H6327

RF TRANSISTOR, L BAND, NPN

246000
BFP620E7764

BFP620E7764

IR (Infineon Technologies)

RF BIPOLAR TRANSISTOR

0
NTE55MCP

NTE55MCP

NTE Electronics, Inc.

RF TRANS PNP 30MHZ TO220 PAIR

0
HFA3134IHZ96

HFA3134IHZ96

Intersil (Renesas Electronics America)

RF TRANS 2 NPN 9V 8.5GHZ SOT23-6

4983
NTE224

NTE224

NTE Electronics, Inc.

RF TRANS NPN 60V 300MHZ TO39

18616
HFA3127B96-HC

HFA3127B96-HC

RF 0.037A, 5-ELEMENT, ULTRA HIGH

2500
2N3663

2N3663

SMALL SIGNAL BIPOLAR TRANSISTOR

14846
ZUMTS17NTA

ZUMTS17NTA

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 11V 3.2GHZ SOT323

346481000
NTE486

NTE486

NTE Electronics, Inc.

RF TRANS NPN 20V 2GHZ TO39

0
NTE2634

NTE2634

NTE Electronics, Inc.

T-PNP SI VIDEO DR 1GHZ TO-126

2688
2SC5455-T1-A

2SC5455-T1-A

Renesas Electronics America

2SC5455 - MD

210000

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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