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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
BFU530VL

BFU530VL

NXP Semiconductors

RF TRANS NPN 12V 11GHZ SOT143B

0
BFQ790H6327XTSA1

BFQ790H6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 6.1V 1.85GHZ SOT89

11535
PH1090-175L

PH1090-175L

Metelics (MACOM Technology Solutions)

RF TRANS NPN 80V

320
HFA3127R

HFA3127R

Intersil (Renesas Electronics America)

RF SMALL SIGNAL TRANSISTOR

142
HFA3096BZ

HFA3096BZ

Intersil (Renesas Electronics America)

RF TRANS 12/15V 5.5GHZ 16SOIC

360
UPA810T-T1-A

UPA810T-T1-A

Renesas Electronics America

MOTION ENCODER

14287
MAPR-000912-500S00

MAPR-000912-500S00

Metelics (MACOM Technology Solutions)

RF TRANS NPN 80V

13
2SC2620QCTR-E

2SC2620QCTR-E

Renesas Electronics America

RF SMALL SIGNAL BIPOLAR TRANSIST

52500
NTE299

NTE299

NTE Electronics, Inc.

RF TRANS NPN 35V TO202

197
NTE2687

NTE2687

NTE Electronics, Inc.

RF TRANS NPN 450V 20MHZ TO220

762
2SC5646A-TL-H

2SC5646A-TL-H

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 4V 12.5GHZ 3SSFP

2972
BFP640H6327XTSA1

BFP640H6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 4.5V 40GHZ SOT343-4

8869
2SA1977-T1B-A

2SA1977-T1B-A

Renesas Electronics America

PNP TRANSISTOR

36965
BFG10W/X,115

BFG10W/X,115

NXP Semiconductors

TRANS NPN 10V 250MA SOT343N

0
MRF428

MRF428

Metelics (MACOM Technology Solutions)

RF TRANS NPN 55V 211-11

44
BF888H6327

BF888H6327

IR (Infineon Technologies)

RF TRANSISTOR, NPN

3000
4MN10CH-TL-E

4MN10CH-TL-E

BIP NPN 0.1A 200V

38970
MMBTH10RG

MMBTH10RG

RF 0.05A, ULTRA HIGH FREQ BAND

393330
MMBTH10LT3G

MMBTH10LT3G

RF SMALL SIGNAL BIPOLAR TRANSIST

110000
KSC2756RMTF

KSC2756RMTF

RF SMALL SIGNAL TRANSISTOR

0

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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