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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
BFP650H6327XTSA1

BFP650H6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 4.5V 37GHZ SOT343-4

34709
MPSH11

MPSH11

RF SMALL SIGNAL TRANSISTOR

18433
BFU550WF

BFU550WF

NXP Semiconductors

RF TRANS NPN 12V 11GHZ SOT323-3

9862
MCH4020-TL-E

MCH4020-TL-E

TRANS NPN 8V 150MA MCPH4

3000
MCH4017-TL-H

MCH4017-TL-H

TRANSISTOR

105000
MRF421

MRF421

Metelics (MACOM Technology Solutions)

TRANS RF NPN 20V 20A 211-11

0
2SC2714-Y(TE85L,F)

2SC2714-Y(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

RF TRANS NPN 30V 550MHZ SMINI

4842
PRF947,115

PRF947,115

NXP Semiconductors

TRANSISTOR NPN 10V 8.5GHZ SOT323

14140
BFG410W,115

BFG410W,115

NXP Semiconductors

TRANS NPN 4.5V 22GHZ SOT343R

9140
NTE313

NTE313

NTE Electronics, Inc.

RF TRANS NPN 30V 530MHZ 3SMD

20
2SC4215-Y(TE85L,F)

2SC4215-Y(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

RF TRANS NPN 30V 550MHZ USM

3799
MPS3563G

MPS3563G

RF SMALL SIGNAL TRANSISTOR

8750
BFP740H6327XTSA1

BFP740H6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 4.7V 42GHZ SOT343

5761
BFR106,215

BFR106,215

NXP Semiconductors

RF SMALL SIGNAL TRANSISTOR

2520
2SC5751-T2-A

2SC5751-T2-A

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSISTOR

78000
3MN03SF-TL-E

3MN03SF-TL-E

BIP NPN 30MA 20V

192000
2SC4774T106S

2SC4774T106S

ROHM Semiconductor

RF TRANS NPN 6V 800MHZ UMT3

1516
KSC1674YBU

KSC1674YBU

RF 0.02A, VERY HIGH FREQUENCY BA

1561444
NE68039R-T1-A

NE68039R-T1-A

CEL (California Eastern Laboratories)

RF TRANS NPN 10V 10GHZ SOT143R

2725
BFP183WH6327XTSA1

BFP183WH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 12V 8.5GHZ SOT343-4

6159

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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