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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
MRF323

MRF323

Metelics (MACOM Technology Solutions)

TRANS RF NPN 33V 1.1A 244-04

0
NTE2633

NTE2633

NTE Electronics, Inc.

T-NPN SI VIDEO DR 1GHZ TO-126

796
MT3S20P(TE12L,F)

MT3S20P(TE12L,F)

Toshiba Electronic Devices and Storage Corporation

RF TRANS NPN 12V 7GHZ PW-MINI

460
BFP405H6327XTSA1

BFP405H6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 5V 25GHZ SOT343

4081
MMBT5179

MMBT5179

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 12V 2GHZ SOT23-3

114459
BFU768F,115

BFU768F,115

NXP Semiconductors

RF TRANS NPN 2.8V 70MA 4DFP

716
KSC1674YTA

KSC1674YTA

RF SMALL SIGNAL TRANSISTOR

40000
MMBT918

MMBT918

NTE Electronics, Inc.

RF 0.05A, VERY HIGH FREQUENCY BA

14030
2SC5347AE-TD-E

2SC5347AE-TD-E

RF SMALL SIGNAL BIPOLAR TRANS

6000
NSVF4017SG4T1G

NSVF4017SG4T1G

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 12V 10GHZ SC82FL/

27619000
MRF455

MRF455

Metelics (MACOM Technology Solutions)

RF TRANS NPN 18V 211-07

40
BFU520WF

BFU520WF

NXP Semiconductors

RF TRANS NPN 12V 10GHZ SOT323-3

6973
NSVF4015SG4T1G

NSVF4015SG4T1G

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 12V 10GHZ SC82FL/

2870
BFP650FH6327XTSA1

BFP650FH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 4.5V 42GHZ 4TSFP

2301
BFU590GX

BFU590GX

NXP Semiconductors

RF TRANS NPN 12V 8.5GHZ SOT223

730
BFQ67W,115

BFQ67W,115

NXP Semiconductors

RF SMALL SIGNAL TRANSISTOR

452669
BFS17NQTA

BFS17NQTA

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 11V 3.2GHZ SOT23

0
NTE15

NTE15

NTE Electronics, Inc.

RF TRANS NPN 19V 1.1GHZ 3SIP

94
BFM505,115

BFM505,115

NXP Semiconductors

TRANS NPN DUAL 8V 9GHZ 6TSSOP

90366
SS9018HBU-FS

SS9018HBU-FS

RF 0.05A, VERY HIGH FREQUENCY BA

401294

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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