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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
BFU520X235

BFU520X235

NXP Semiconductors

NPN RF TRANSISTOR

4000
BFP843H6327XTSA1

BFP843H6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 2.25V SOT343

6183
MT3S111(TE85L,F)

MT3S111(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

RF TRANS NPN 6V 11.5GHZ SMINI

6922
2SC3357-T1-A

2SC3357-T1-A

Renesas Electronics America

RF 0.1A, ULTRA HIGH FREQ BAND

17723
PH3135-20M

PH3135-20M

Metelics (MACOM Technology Solutions)

RF TRANS NPN 65V

0
BFP181E7764HTSA1

BFP181E7764HTSA1

IR (Infineon Technologies)

RF TRANS NPN 12V 8GHZ SOT143-4

2182
2N3866A PBFREE

2N3866A PBFREE

Central Semiconductor

RF TRANS NPN 30V 400MHZ TO39

0
2SC5095-O(TE85L,F)

2SC5095-O(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

RF TRANS NPN 10V 10GHZ SC70

2000
BFU550XVL

BFU550XVL

NXP Semiconductors

RF TRANS NPN 12V 11GHZ SOT143B

0
BFT25,215

BFT25,215

NXP Semiconductors

RF TRANS NPN 5V 2.3GHZ TO236AB

2833
BFU730LXZ

BFU730LXZ

NXP Semiconductors

RF TRANS NPN 3V 53GHZ 3DFN1006

0
MMBTH11-FS

MMBTH11-FS

RF 0.05A, VERY HIGH FREQUENCY BA

6585
NTE107

NTE107

NTE Electronics, Inc.

RF TRANS NPN 12V 2.1GHZ TO92

240
BFP740ESDH6327XTSA1

BFP740ESDH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 4.7V 45GHZ SOT343

4131
NE68039R-T1

NE68039R-T1

CEL (California Eastern Laboratories)

RF TRANS NPN 10V 10GHZ SOT143R

851
MCH3007-TL-H

MCH3007-TL-H

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 12V 8GHZ 3MCPH

96000
2N5770 PBFREE

2N5770 PBFREE

Central Semiconductor

RF TRANS NPN 15V 900MHZ TO92

3866
ON5087,115

ON5087,115

NXP Semiconductors

RF TRANSPONDER SOT343F

2905
BFU520XAR

BFU520XAR

NXP Semiconductors

RF TRANS NPN 12V 10.5GHZ SOT143B

3019
CMPT918 TR PBFREE

CMPT918 TR PBFREE

Central Semiconductor

RF TRANS NPN 15V 600MHZ SOT23

5971

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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