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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
NTE54MP

NTE54MP

NTE Electronics, Inc.

RF TRANS NPN 30MHZ TO220 PAIR

11
NTE69

NTE69

NTE Electronics, Inc.

RF TRANS NPN 25V 1.1GHZ TO92

117
BFG310W/XR,115

BFG310W/XR,115

NXP Semiconductors

TRANS NPN 6V 10MA 14GHZ SOT343R

8983
BFG540W/XR,135

BFG540W/XR,135

NXP Semiconductors

TRANS RF NPN 9GHZ 15V SOT343R

0
MPS5179RLRP

MPS5179RLRP

SMALL SIGNAL BIPOLAR TRANSISTOR

4000
KSC2756YMTF

KSC2756YMTF

RF SMALL SIGNAL TRANSISTOR

0
CPH6020-TL-E

CPH6020-TL-E

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 8V 16GHZ 6CPH

111000
BFS483H6327XTSA1

BFS483H6327XTSA1

IR (Infineon Technologies)

RF TRANS 2 NPN 12V 8GHZ SOT363-6

6435
BFP450E6327

BFP450E6327

IR (Infineon Technologies)

RF TRANSISTOR, L BAND, NPN

23161
BFR93AWH6327XTSA1

BFR93AWH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 12V 6GHZ SOT323-3

15495
MAX2601ESA+T

MAX2601ESA+T

Maxim Integrated

RF TRANS NPN 15V 1GHZ 8SOIC

0
MRF422

MRF422

Metelics (MACOM Technology Solutions)

RF TRANS NPN 35V 211-11

1
MRF313

MRF313

Metelics (MACOM Technology Solutions)

TRANS RF NPN 30V 150MA 305A-01

0
2SC4215-O(TE85L,F)

2SC4215-O(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

RF TRANS NPN 30V 550MHZ USM

0
BFP196WE6327

BFP196WE6327

IR (Infineon Technologies)

RF TRANSISTOR, L BAND, NPN

32200
MCH4015-TL-H

MCH4015-TL-H

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 12V 10GHZ 4MCPH

4712
2SC5013-T1-A

2SC5013-T1-A

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSISTOR

162000
2SC3583-T1B-A

2SC3583-T1B-A

Renesas Electronics America

2SC3583 - MD

129000
BFU660F,115

BFU660F,115

NXP Semiconductors

RF TRANS NPN 5.5V 21GHZ 4DFP

5949
BFP450H6433XTMA1

BFP450H6433XTMA1

IR (Infineon Technologies)

RF TRANS NPN 5V 24GHZ SOT343-4

0

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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