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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
2SA1669-TB-E

2SA1669-TB-E

Sanyo Denki SanUPS Products

PNP EPITAXIAL PLANAR SILICON

0
2SC2839E-SPA-AC

2SC2839E-SPA-AC

NPN EPITAXIAL PLANAR SILICON

0
15C02SS-TL-E

15C02SS-TL-E

TRANSISTOR

64000
BFP842ESDH6327

BFP842ESDH6327

ULTRA LOW-NOISE TRANSISTOR

0
BFP 182W H6327

BFP 182W H6327

IR (Infineon Technologies)

RF BIPOLAR TRANSISTOR

6000
NSVF5490SKT3G

NSVF5490SKT3G

Sanyo Semiconductor/ON Semiconductor

RF-TR 10V 30MA FT=8G NPN

790256000
BFR92PE6530HTSA1

BFR92PE6530HTSA1

IR (Infineon Technologies)

RF LOW-NOISE SI TRANSISTOR

34333
NESG2031M05-T1-A

NESG2031M05-T1-A

Renesas Electronics America

NESG2031 - NPN SIGE RF TRANSISTO

38528
BFU550XRR215

BFU550XRR215

NXP Semiconductors

NPN RF TRANSISTOR

0
15GN03F-TL-E

15GN03F-TL-E

BIP NPN 70MA 10V FT=1.5G

8000
NESG2021M16-T3-A

NESG2021M16-T3-A

Renesas Electronics America

RF SMALL SIGNAL TRANSISTOR

20000
BFP420FH6327

BFP420FH6327

IR (Infineon Technologies)

RF TRANSISTOR, X BAND, NPN

2000
BFP520FE6327

BFP520FE6327

IR (Infineon Technologies)

LOW-NOISE SI TRANSISTOR

15000
NSVF6001SB6T1G

NSVF6001SB6T1G

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 0.1A 12V MCPH6

66000
BF799

BF799

IR (Infineon Technologies)

RF TRANSISTOR, NPN

11000
HSG2001VF-01TL-E

HSG2001VF-01TL-E

Renesas Electronics America

NPN HIGH FREQPOWER AMP

468000
BFP 181 E7764

BFP 181 E7764

IR (Infineon Technologies)

RF TRANSISTOR, L BAND, NPN

6000
BFP405FH6327

BFP405FH6327

IR (Infineon Technologies)

RF TRANSISTOR, L BAND, NPN

148915
HSG1002VE-TL-E

HSG1002VE-TL-E

Renesas Electronics America

RF 0.035A C BAND GERMANIUM NPN

519687
BFR380FE6327

BFR380FE6327

IR (Infineon Technologies)

RF BIPOLAR TRANSISTOR

0

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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