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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
HFA3127RZ96

HFA3127RZ96

Intersil (Renesas Electronics America)

RF TRANS 5 NPN 12V 8GHZ 16QFN

0
12A01M-TL-E

12A01M-TL-E

Sanyo Denki SanUPS Products

TRANSISTOR

336000
BFR181WH6327XTSA1

BFR181WH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 12V 8GHZ SOT323-3

19051
BFP840ESDH6327XTSA1

BFP840ESDH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 2.25V 80GHZ SOT343

1856
HFA3127BZ96

HFA3127BZ96

Intersil (Renesas Electronics America)

RF TRANS 5 NPN 12V 8GHZ 16SOIC

0
UPA801T-T1-A

UPA801T-T1-A

Renesas Electronics America

RF 0.1A, 2-ELEMENT, S BAND, NPN

32500
BFP183E7764

BFP183E7764

RF BIPOLAR TRANSISTOR

21000
MCH4021-TL-E

MCH4021-TL-E

TRANSISTOR

207000
MAPRST0912-350

MAPRST0912-350

Metelics (MACOM Technology Solutions)

RF TRANS NPN 65V 1.215GHZ

0
MT3S20TU(TE85L)

MT3S20TU(TE85L)

Toshiba Electronic Devices and Storage Corporation

RF TRANS NPN 12V 7GHZ UFM

2871
2SC4228-T1-A

2SC4228-T1-A

Renesas Electronics America

RF 0.035A, ULTRA HIGH FREQ BAND

162000
BFR360L3E6765

BFR360L3E6765

LOW-NOISE SI TRANSISTOR

105333
BFP420H6740

BFP420H6740

IR (Infineon Technologies)

RF TRANSISTOR, X BAND, NPN

455000
BFU910FX

BFU910FX

NXP Semiconductors

RF SMALL SIGNAL BIPOLAR TRANSIST

1025704
BF799WE6327

BF799WE6327

IR (Infineon Technologies)

RF TRANSISTOR, NPN

6000
BF494

BF494

SMALL SIGNAL BIPOLAR TRANSISTOR

0
MT3S16U(TE85L,F)

MT3S16U(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

RF TRANS NPN 5V 4GHZ USM

7679
BFP420FH6327XTSA1

BFP420FH6327XTSA1

IR (Infineon Technologies)

BFP420 - LOW-NOISE SI TRANSISTOR

41000
KSC1393OTA

KSC1393OTA

RF SMALL SIGNAL TRANSISTOR

6000
BFR193WH6327XTSA1

BFR193WH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 12V 8GHZ SOT323-3

22019

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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