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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
MPS3563

MPS3563

TRANS NPN RF SS 12V TO92

8000
PH3135-65M

PH3135-65M

Metelics (MACOM Technology Solutions)

RF TRANS NPN 65V

20
NE696M01-T1

NE696M01-T1

CEL (California Eastern Laboratories)

RF TRANS NPN 6V 14GHZ SOT363

10533
SS9018FBU

SS9018FBU

RF 0.05A, VERY HIGH FREQUENCY BA

107666
BFU520YX

BFU520YX

NXP Semiconductors

RF TRANS 2 NPN 12V 10GHZ SOT363

19180
BFS481H6327

BFS481H6327

IR (Infineon Technologies)

LOW-NOISE SI TRANSISTOR

17444
BFR540,215

BFR540,215

NXP Semiconductors

NPN 9 GHZ WIDEBAND TRANSISTOR

0
BFR750L3RHE6327

BFR750L3RHE6327

IR (Infineon Technologies)

RF BIPOLAR TRANSISTOR

38248
2SC4957-T1-A

2SC4957-T1-A

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSISTOR

165842
BFU530XVL

BFU530XVL

NXP Semiconductors

RF TRANS NPN 12V 11GHZ SOT143B

0
BFU725F/N1,115

BFU725F/N1,115

NXP Semiconductors

RF TRANS NPN 2.8V 55GHZ 4SO

10286
MRF1090MB

MRF1090MB

Metelics (MACOM Technology Solutions)

RF TRANS NPN 70V 332A-03

0
2SC4095-T1-A

2SC4095-T1-A

Renesas Electronics America

NPN TRANSISTOR

189000
NTE78

NTE78

NTE Electronics, Inc.

RF TRANS NPN 75V 16DIP

52
BFU520WX

BFU520WX

NXP Semiconductors

RF TRANS NPN 12V 10GHZ SOT323-3

21491
MPS5179

MPS5179

RF SMALL SIGNAL TRANSISTOR

0
CLF1G0035-200P

CLF1G0035-200P

NXP Semiconductors

RF POWER TRANSISTORS

120
NTE108-1

NTE108-1

NTE Electronics, Inc.

RF TRANS NPN 15V 600MHZ TO106

3550
ON5088,115

ON5088,115

NXP Semiconductors

RF TRANS NPN 10V 55GHZ 4DFP

2329
BFR182E6327

BFR182E6327

BFR182 - LOW-NOISE SI TRANSISTOR

79170

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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