Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DMC266030R

DMC266030R

Panasonic

TRANS PREBIAS DUAL NPN MINI6

2644

DMA566020R

DMA566020R

Panasonic

TRANS PREBIAS DUAL PNP SMINI6

2881

XN0A31100L

XN0A31100L

Panasonic

TRANS NPN/PNP PREBIAS 0.3W MINI5

34

DMG263020R

DMG263020R

Panasonic

TRANS NPN/PNP PREBIAS 0.3W MINI5

86

DMC961040R

DMC961040R

Panasonic

TRANS PREBIAS DUAL NPN SSMINI5

11224

DMA961030R

DMA961030R

Panasonic

TRANS PREBIAS DUAL PNP SSMINI5

15989

DMC9610M0R

DMC9610M0R

Panasonic

TRANS PREBIAS DUAL NPN SSMINI5

5827

XP0411200L

XP0411200L

Panasonic

TRANS PREBIAS DUAL PNP SMINI6

1464

UP0338300L

UP0338300L

Panasonic

TRANS PREBIAS NPN/PNP SSMINI5

1672

UP0421100L

UP0421100L

Panasonic

TRANS PREBIAS DUAL NPN SSMINI6

1398

DMC562000R

DMC562000R

Panasonic

TRANS 2NPN PREBIAS 0.15W SMINI5

198

DMG964020R

DMG964020R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

7255

DMG963H10R

DMG963H10R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI5

16000

DMC2610E0R

DMC2610E0R

Panasonic

TRANS 2NPN PREBIAS 0.3W MINI5

2969

UP0411100L

UP0411100L

Panasonic

TRANS PREBIAS DUAL PNP SSMINI6

7

DMG964H10R

DMG964H10R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

8000

UP0431300L

UP0431300L

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

782

DMC964050R

DMC964050R

Panasonic

TRANS PREBIAS DUAL NPN SSMINI6

15919

DMA261020R

DMA261020R

Panasonic

TRANS PREBIAS DUAL PNP MINI5

5975

XP0421500L

XP0421500L

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

2601

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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