Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
NP0J1A300A

NP0J1A300A

Panasonic

TRANS PREBIAS DUAL PNP SSSMINI6

9860

DMA964010R

DMA964010R

Panasonic

TRANS PREBIAS DUAL PNP SSMINI6

15305

DMG963HE0R

DMG963HE0R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI5

16000

DMG964040R

DMG964040R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

4331

XP0111300L

XP0111300L

Panasonic

TRANS PREBIAS DUAL PNP SMINI5

1223

DMA5610M0R

DMA5610M0R

Panasonic

TRANS PREBIAS DUAL PNP SMINI5

5980

DMA264010R

DMA264010R

Panasonic

TRANS PREBIAS DUAL PNP MINI6

932

DMA261090R

DMA261090R

Panasonic

TRANS PREBIAS DUAL PNP MINI5

1175

XP0331200L

XP0331200L

Panasonic

TRANS PREBIAS NPN/PNP SMINI5

5203

DMA961010R

DMA961010R

Panasonic

TRANS PREBIAS DUAL PNP SSMINI5

6197

DMG264H00R

DMG264H00R

Panasonic

TRANS NPN/PNP PREBIAS 0.3W MINI6

2830

DMA566050R

DMA566050R

Panasonic

TRANS PREBIAS DUAL PNP SMINI6

3000

DMG9640T0R

DMG9640T0R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

7985

DMC2640L0R

DMC2640L0R

Panasonic

TRANS PREBIAS DUAL NPN MINI6

1279

DMC266060R

DMC266060R

Panasonic

TRANS PREBIAS DUAL NPN MINI6

2900

UP0431400L

UP0431400L

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

2179

DMG963030R

DMG963030R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI5

7987

DMC264050R

DMC264050R

Panasonic

TRANS PREBIAS DUAL NPN MINI6

360

DMC566040R

DMC566040R

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

692

XN0621600L

XN0621600L

Panasonic

TRANS PREBIAS DUAL NPN MINI6

4651

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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