Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DMA2610F0R

DMA2610F0R

Panasonic

TRANS PREBIAS DUAL PNP MINI5

1670

DMA564070R

DMA564070R

Panasonic

TRANS PREBIAS DUAL PNP SMINI6

2975

DMG963HC0R

DMG963HC0R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI5

16000

DMC561040R

DMC561040R

Panasonic

TRANS 2NPN PREBIAS 0.15W SMINI5

191

DMC564070R

DMC564070R

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

0

DMA5610F0R

DMA5610F0R

Panasonic

TRANS PREBIAS DUAL PNP SMINI5

1920

DMC2640F0R

DMC2640F0R

Panasonic

TRANS PREBIAS DUAL NPN MINI6

0

UP04113G0L

UP04113G0L

Panasonic

TRANS PREBIAS DUAL PNP SSMINI5

4045

DMA2610H0R

DMA2610H0R

Panasonic

TRANS PREBIAS DUAL PNP MINI5

1454

DMG964060R

DMG964060R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

4200

DMC566050R

DMC566050R

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

6000

DMA564060R

DMA564060R

Panasonic

TRANS PREBIAS DUAL PNP SMINI6

3000

DMG564010R

DMG564010R

Panasonic

TRANS PREBIAS NPN/PNP SMINI6

1841

DMG964H50R

DMG964H50R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

16000

DMG214010R

DMG214010R

Panasonic

TRANS PNP PREBIAS/NPN 0.3W MINI6

5930

DMC561010R

DMC561010R

Panasonic

TRANS 2NPN PREBIAS 0.15W SMINI5

40

DMC5640L0R

DMC5640L0R

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

8657

DMA566010R

DMA566010R

Panasonic

TRANS PREBIAS DUAL PNP SMINI6

6000

DMG564050R

DMG564050R

Panasonic

TRANS PREBIAS NPN/PNP SMINI6

3000

DMG563H40R

DMG563H40R

Panasonic

TRANS PREBIAS NPN/PNP SMINI5

3000

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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