Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DME914C10R

DME914C10R

Panasonic

TRANS NPN PREBIAS/PNP SSMINI6

7782

XP0621500L

XP0621500L

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

3613

DMC261030R

DMC261030R

Panasonic

TRANS 2NPN PREBIAS 0.3W MINI5

2044

DMC261050R

DMC261050R

Panasonic

TRANS 2NPN PREBIAS 0.3W MINI5

11

XP0431100L

XP0431100L

Panasonic

TRANS PREBIAS NPN/PNP SMINI6

65235

DMC266040R

DMC266040R

Panasonic

TRANS PREBIAS DUAL NPN MINI6

2663

DMC566060R

DMC566060R

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

5990

DMA961040R

DMA961040R

Panasonic

TRANS PREBIAS DUAL PNP SSMINI5

1930

DMA261060R

DMA261060R

Panasonic

TRANS PREBIAS DUAL PNP MINI5

5699

XN0F26300L

XN0F26300L

Panasonic

TRANS PREBIAS DUAL NPN MINI6

3000

DMC964030R

DMC964030R

Panasonic

TRANS PREBIAS DUAL NPN SSMINI6

8000

DMC561070R

DMC561070R

Panasonic

TRANS 2NPN PREBIAS 0.15W SMINI5

5795

UP0431600L

UP0431600L

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

3126

DMC564010R

DMC564010R

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

1308

XN0411600L

XN0411600L

Panasonic

TRANS PREBIAS DUAL PNP MINI6

1270

DMC5640M0R

DMC5640M0R

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

996

XN0421F00L

XN0421F00L

Panasonic

TRANS PREBIAS DUAL NPN MINI6

4614

DMA964030R

DMA964030R

Panasonic

TRANS PREBIAS DUAL PNP SSMINI6

7820

NP043A200A

NP043A200A

Panasonic

TRANS PREBIAS NPN/PNP SSSMINI6

19548

DMA561040R

DMA561040R

Panasonic

TRANS PREBIAS DUAL PNP SMINI5

5975

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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