Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
XP0421100L

XP0421100L

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

85149

UP04215G0L

UP04215G0L

Panasonic

TRANS PREBIAS DUAL NPN SSMINI6

8000

XP0421200L

XP0421200L

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

507

UP03390G0L

UP03390G0L

Panasonic

TRANS PREBIAS NPN/PNP SSMINI5

14739

NP062AN00A

NP062AN00A

Panasonic

TRANS 2NPN PREBIAS SSSMINI6

19660

XN0421300L

XN0421300L

Panasonic

TRANS PREBIAS DUAL NPN MINI6

1273

DMA561080R

DMA561080R

Panasonic

TRANS PREBIAS DUAL PNP SMINI5

3000

DMC564030R

DMC564030R

Panasonic

TRANS PREBIAS DUAL NPN SMINI6

1464

DMA9610F0R

DMA9610F0R

Panasonic

TRANS PREBIAS DUAL PNP SSMINI5

8000

DMG564040R

DMG564040R

Panasonic

TRANS PREBIAS NPN/PNP SMINI6

11328

UP01213G0L

UP01213G0L

Panasonic

TRANS PREBIAS DUAL NPN SSMINI5

15315

DMG564H30R

DMG564H30R

Panasonic

TRANS PREBIAS NPN/PNP SMINI6

5850

DMA561000R

DMA561000R

Panasonic

TRANS PREBIAS DUAL PNP SMINI5

6000

DMC964020R

DMC964020R

Panasonic

TRANS PREBIAS DUAL NPN SSMINI6

7570

XP0411500L

XP0411500L

Panasonic

TRANS PREBIAS DUAL PNP SMINI6

538

DMA264050R

DMA264050R

Panasonic

TRANS PREBIAS DUAL PNP MINI6

5380

DMC261000R

DMC261000R

Panasonic

TRANS 2NPN PREBIAS 0.3W MINI5

3342

UP0121300L

UP0121300L

Panasonic

TRANS PREBIAS DUAL NPN SSMINI5

251

DMA566030R

DMA566030R

Panasonic

TRANS PREBIAS DUAL PNP SMINI6

2850

DMG563H10R

DMG563H10R

Panasonic

TRANS PREBIAS NPN/PNP SMINI5

5975

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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