Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PUMD15,115

PUMD15,115

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

5859

PEMB17,115

PEMB17,115

Nexperia

NOW NEXPERIA PEMB17 - SMALL SIGN

176000

PRMH10Z

PRMH10Z

Nexperia

TRANS PREBIAS 2NPN 50V DFN1412-6

4927

PUMB18,115

PUMB18,115

Nexperia

NOW NEXPERIA PUMB18 - SMALL SIGN

6000

PBLS1501V,115

PBLS1501V,115

Nexperia

TRANS PREBIAS 1NPN 1PNP SOT666

11926

PEMD2,315

PEMD2,315

Nexperia

NOW NEXPERIA PEMD2 - SMALL SIGNA

78500

PUMH17,115

PUMH17,115

Nexperia

TRANS PREBIAS 2NPN 50V 6TSSOP

17989

PUMH7F

PUMH7F

Nexperia

PUMH7/SOT363/SC-88

0

PBLS2004D,115

PBLS2004D,115

Nexperia

TRANS PREBIAS 1NPN 1PNP 6TSOP

5342

PEMB30,115

PEMB30,115

Nexperia

TRANS PREBIAS 2PNP 50V SOT666

0

PEMH2,315

PEMH2,315

Nexperia

PEMH2 - UPN/NPN DOUBLE RESISTOR-

16000

PBLS4001D,115

PBLS4001D,115

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR,

68102

NHUMH2X

NHUMH2X

Nexperia

NHUMH2/SOT363/SC-88

3000

PEMD18,115

PEMD18,115

Nexperia

TRANS PREBIAS NPN/PNP 50V SOT666

0

PUMH11,115

PUMH11,115

Nexperia

TRANS PREBIAS 2NPN 50V 6TSSOP

5855

PQMD2Z

PQMD2Z

Nexperia

TRANS PREBIAS NPN/PNP 50V 6DFN

0

PEMD2,115

PEMD2,115

Nexperia

TRANS PREBIAS NPN/PNP SOT666

2214

PBLS4001Y,115

PBLS4001Y,115

Nexperia

TRANS PREBIAS 1NPN 1PNP 6TSSOP

4333

PUMH14,115

PUMH14,115

Nexperia

NOW NEXPERIA PUMH14 - SMALL SIGN

91687

PEMB10,115

PEMB10,115

Nexperia

TRANS 2PNP PREBIAS 0.3W SOT666

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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