Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PBLS4002D,115

PBLS4002D,115

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR,

41323

PUMD48,125

PUMD48,125

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSSOP

0

NHUMD10X

NHUMD10X

Nexperia

NHUMD10/SOT363/SC-88

2955

PUMD16,115

PUMD16,115

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

963

PUMD2,165

PUMD2,165

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

0

PUMH9,125

PUMH9,125

Nexperia

PUMH9 - NPN/NPN RESISTOR-EQUIPPE

3462000

PBLS6024D,115

PBLS6024D,115

Nexperia

NOW NEXPERIA PBLS6024D - SMALL S

3000

PUMD2,125

PUMD2,125

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

0

PBLS6003D,115

PBLS6003D,115

Nexperia

TRANS PREBIAS 1NPN 1PNP 6TSOP

480

PEMH14,115

PEMH14,115

Nexperia

NOW NEXPERIA PEMH14- SMALL SIGNA

1220000

PUMD3,115

PUMD3,115

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

42368

PEMH7,115

PEMH7,115

Nexperia

NOW NEXPERIA PEMH7 - SMALL SIGNA

159535

PQMD16Z

PQMD16Z

Nexperia

TRANS PREBIAS NPN/PNP 50V 6DFN

0

PUMD15,135

PUMD15,135

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

0

PBLS2002D,115

PBLS2002D,115

Nexperia

TRANS NPN PREBIAS/PNP 0.6W 6TSOP

3000

PEMH30,115

PEMH30,115

Nexperia

TRANS PREBIAS 2NPN 50V SOT666

0

PUMD4,115

PUMD4,115

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSSOP

2718

PEMH15,115

PEMH15,115

Nexperia

TRANS 2NPN PREBIAS 0.3W SOT666

24297

PUMB9,115

PUMB9,115

Nexperia

TRANS PREBIAS 2PNP 50V 6TSSOP

1635

PUMD48,165

PUMD48,165

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

10115

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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