Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PUMD6,115

PUMD6,115

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSSOP

58

NHUMB10X

NHUMB10X

Nexperia

NHUMB10/SOT363/SC-88

3000

PEMB2,115

PEMB2,115

Nexperia

TRANS PREBIAS 2PNP 50V SOT666

0

PEMD19,115

PEMD19,115

Nexperia

TRANS PREBIAS NPN/PNP 50V SOT666

0

NHUMH11X

NHUMH11X

Nexperia

NHUMH11/SOT363/SC-88

3000

PUMH4,115

PUMH4,115

Nexperia

TRANS PREBIAS 2NPN 50V 6TSSOP

16238

PEMB9,315

PEMB9,315

Nexperia

TRANS PREBIAS 2PNP 50V SOT666

0

PEMD9,315

PEMD9,315

Nexperia

TRANS PREBIAS NPN/PNP SOT666

0

NHUMD10F

NHUMD10F

Nexperia

NHUMD10/SOT363/SC-88

10000

PUMD24,115

PUMD24,115

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

0

PBLS1502Y,115

PBLS1502Y,115

Nexperia

TRANS PREBIAS 1NPN 1PNP 6TSSOP

0

PUMB9,125

PUMB9,125

Nexperia

TRANS PREBIAS 2PNP 50V 6TSSOP

1025

PIMC31,115

PIMC31,115

Nexperia

TRANS NPN/PNP PREBIAS 6TSOP

177718

PBLS2023D,115

PBLS2023D,115

Nexperia

NOW NEXPERIA PBLS2023D - SMALL S

12000

PIMD3,115

PIMD3,115

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSOP

74743

PEMD3,115

PEMD3,115

Nexperia

TRANS PREBIAS NPN/PNP SOT666

1751

PEMD30,115

PEMD30,115

Nexperia

NOW NEXPERIA PEMD30 - SMALL SIGN

21320

NHUMD13F

NHUMD13F

Nexperia

NHUMD13/SOT363/SC-88

10000

PUMH16,115

PUMH16,115

Nexperia

TRANS PREBIAS 2NPN 50V 6TSSOP

2715

PEMB20,115

PEMB20,115

Nexperia

TRANS PREBIAS 2PNP 50V SOT666

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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