Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PUMD6,135

PUMD6,135

Nexperia

NOW NEXPERIA PUMD6 - SMALL SIGNA

6600000

PIMN31,115

PIMN31,115

Nexperia

TRANS PREBIAS 2NPN 50V 6TSOP

1271

PUMD14,115

PUMD14,115

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSSOP

0

NHUMB10F

NHUMB10F

Nexperia

NHUMB10/SOT363/SC-88

10000

PUMB2F

PUMB2F

Nexperia

PUMB2/SOT363/SC-88

0

PUMD6,125

PUMD6,125

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

0

NHUMB9X

NHUMB9X

Nexperia

NHUMB9/SOT363/SC-88

3000

PEMD12,115

PEMD12,115

Nexperia

TRANS PREBIAS NPN/PNP 50V SOT666

1985

PBLS4003Y,115

PBLS4003Y,115

Nexperia

TRANS NPN PREBIAS/PNP 6TSSOP

1368

PUMB1,135

PUMB1,135

Nexperia

TRANS 2PNP PREBIAS 0.3W 6TSSOP

0

PUMH2,115

PUMH2,115

Nexperia

TRANS PREBIAS 2NPN 50V 6TSSOP

13139

PEMD12,315

PEMD12,315

Nexperia

PEMD12 - UPN/PNP DOUBLE RESISTOR

0

PEMD3,315

PEMD3,315

Nexperia

TRANS PREBIAS NPN/PNP 50V SOT666

0

PUMH9,135

PUMH9,135

Nexperia

TRANS PREBIAS 2NPN 50V 6TSSOP

0

PIMD3F

PIMD3F

Nexperia

PIMD3/SOT457/SC-74

0

PUMD3,125

PUMD3,125

Nexperia

TRANS PREBIAS NPN/PNP 6TSSOP

0

NHUMD2F

NHUMD2F

Nexperia

NHUMD2/SOT363/SC-88

477

PUMF11,115

PUMF11,115

Nexperia

PUMF11 - NPN RESISTOR-EQUIPPED T

0

PUMB13,115

PUMB13,115

Nexperia

TRANS PREBIAS 2PNP 50V 6TSSOP

4865

PEMH18,115

PEMH18,115

Nexperia

TRANS PREBIAS 2NPN 50V SOT666

0

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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